The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source
The variation of nitrogen doping concentration was systematically investigated with respect to the amount of silicon powder added to the SiC powder for growing n-type 6H-SiC single crystal by the sublimation method. To change intentionally the Si content in the SiC powder, 0wt% to 2wt% of a silicon powder was added to first-thermal treated SiC powder and the mixed powder was treated again at 1800oC for 3 hours to eliminate excess free-metallic silicon. Nitrogen doped 6H-SiC single crystals were grown by using 2nd-thermal treatment SiC powder at fixed N2/(Ar + N2) (3%). The nitrogen doping concentration of 6H-SiC crystals increased with increasing Si content in the SiC powder. In this work, we could identify that the additional silicon powder in SiC powder plays a role in the enhancement of nitrogen doping in 6H-SiC crystals grown by the sublimation method.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
K. M. Kim et al., "The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source", Materials Science Forum, Vols. 527-529, pp. 55-58, 2006