‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC

Abstract:

A new technique that reduces stacking fault (SF) density in 3C-SiC, termed switch-back epitaxy (SBE), is demonstrated regarding its effects on morphological and electrical properties. SBE is a homoepitaxial growth process on backside of 3C-SiC grown on undulant-Si. The key feature of SBE, the surface polarity of residual SFs in 3C-SiC, which cannot be erased by heteroepitaxial growth on undulant-Si, is converted from the Si-face to the C-face. The SF density on the surface of 3C-SiC grown by SBE shows a remarkable decrease to one-seventh lower than that on undulant- Si. The leakage current of pn-diode epitaxially fabricated on the 3C-SiC substrate grown by SBE decreases to as low as one-thirtieth that on 3C-SiC substrate grown without SBE. These results suggest that SBE eliminates the SFs on the surface of 3C-SiC and subsequently reduces the leakage current at pn-junction thus fabricated.

• Periodical: Materials Science Forum (Volumes 527-529)
• Pages: 291-294
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.527-529.291
• Online since: October 2006
• Authors: Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Hiroyuki Nagasawa
• Keywords: 3C-SiC, Homoepitaxy, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), P-N Junction, Stacking Fault

References

[1] H. Nagasawa, K. Yagi and T. Kawahara: J. Cryst. Growth Vol. 1244 (2002), p.237.

[2] H. Nagasawa, K. Yagi, T. Kawahara, N. Hatta, G. Pensl, W.J. Choyke, T. Yamada, K.M. Itoh and A. Schöner: Silicon Carbide Recent Major Advances (Springer Verlag, Germany 2004), p.207.

DOI: 10.1007/978-3-642-18870-1_9

[3] P. Pirouz, C.M. Chorey and J.A. Powell: Appl. Phys. Lett. Vol. 50 (1978), p.221.

[4] K. Shibahara, S. Nishino and H. Matsunami: J. Cryst. Growth Vol. 78 (1986), p.538.

0. 1 0. 2 0. 3 10Leakage current density (A/cm2) Yield (%).

[10] Leakage current density (A/cm2) Yield (%).

0. 1 0. 2 0. 3.

[20] [20] [0] 0. 1 0. 2 0. 3 10Leakage current density (A/cm2) Yield (%).

[10] Leakage current density (A/cm2) Yield (%).

0. 1 0. 2 0. 3.

[20] [20] Fig. 5. Histograms of leakage current density at 100V at reverse bias voltage for pn diodes.