Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
Flash lamp annealing of multilayer stack of the type SiC/Silicon overlayer(SOL)/SiC reduces the defect densities in the 3C-SiC/Si heteroepitaxial structure. Ge and C additions to the SOL lead to a substantial increase of the mass transfer from the upper layer to the lower SiC layer. If the Ge content of the SOL and the flash lamp annealing conditions are properly chosen a homogeneous layer with a 3C-SiC thickness between 150 and 200 nm can be achieved corresponding to a growth rate between 7.5 and 10.0 +m/s. The thickening of the lower layer depends on the SOL composition. Ge and/or C incorporation into the SOL and therefore into the Si melt enhances the mass transport from the upper SiC layer to the lower one.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
J. Pezoldt et al., "Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification", Materials Science Forum, Vols. 527-529, pp. 295-298, 2006