Theory of Dislocations in SiC: The Effect of Charge on Kink Migration

Abstract:

Under forward bias bipolar 4H- and 6H-SiC devices are known to degrade rapidly through stacking fault formation and expansion in the basal plane. It is believed that the ob- served rapid stacking fault growth is due to a recombination-enhanced dislocation glide (REDG) mechanism at the bordering partial dislocations. This degradation phenomenon has generated considerable interest in the involved dislocations — in particular in their atomic and electronic structure, but also in the mechanisms of their glide motion. Fortunately, nowadays advances in computing power and in theoretical methodology allow the ab initio based modelling of some aspects of the problem. This paper therefore gives a brief review of recent activities in this field, and further discusses some general problems of ab initio based modelling of dislocations in compound semiconductors.

• Periodical: Materials Science Forum (Volumes 527-529)
• Pages: 321-326
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.527-529.321
• Online since: October 2006
• Authors: T.A.G. Eberlein, R. Jones, A.T. Blumenau
• Keywords: Dislocation, Modeling, Recombination Enhanced Glide, Stacking Fault

References

[1] H. Lendenmann, F. Dahlquist, N. Johansson, R. S¨oderholm, P. ˚A. Nilsson, J. P. Bergman and P. Skytt: Mater. Sci. Forum Vol. 353-356 (2000), p.727.

DOI: 10.4028/www.scientific.net/msf.353-356.727

[2] A. Galeckas, J. Linnros, B. Breitholtz and H. Bleichner: Mater. Sci. Forum Vol. 353-356 (2000), p.389.

[3] J. P. Bergman, H. Lendenmann, P. ˚A. Nilsson, U. Lindefelt and P. Skytt: Mater. Sci. Forum Vol. 353-356 (2000), p.299.

DOI: 10.4028/www.scientific.net/msf.353-356.299

[4] A. Galeckas, J. Linnros and P. Pirouz: Appl. Phys. Lett. Vol. 81 (2002), p.883.

[5] J. Q. Liu, M. Skowronski, C. Hallin, R. S¨oderholm and H. Lendenmann: Appl. Phys. Lett. Vol. 80 (2002), p.749.

[6] John D. Weeks, John C. Tully and L. C. Kimerling: Phys. Rev. B Vol. 12 (1975), p.3286.

[7] H. Sumi: Phys. Rev. B Vol. 29 (1984), p.4616.

[8] K. Maeda and S. Takeuchi: in F. R. N. Nabarro and M. S. Duesbery, editors, Dislocations in Solids Vol. 10, North-Holland, Amsterdam (1996), p.444.

[9] A. T. Blumenau, C. J. Fall, R. Jones, M. I. Heggie, P. R. Briddon, T. Frauenheim and S. ¨Oberg: J. Phys.: Condens. Matter Vol. 14 (2002), p.12741.

DOI: 10.1088/0953-8984/14/48/311

[10] A. T. Blumenau, C. J. Fall, R. Jones, S. ¨Oberg, T. Frauenheim and P. R. Briddon: Phys. Rev. B Vol. 68 (2003), p.174108.

[11] M. J. P. Musgrave and J. A. Pople: Proc. R. Soc. Lond. A Vol. 268 (1962), p.474.

[12] P. N. Keating: Phys. Rev. Vol. 145 (1966), p.637.

[13] F. H. Stillinger and T. A. Weber: Phys. Rev. B Vol. 31 (1985), p.5262.

[14] J. Tersoff: Phys. Rev. Lett. Vol. 56 (1986), p.632.

[15] M. Heggie and M. Nyl´en: Philos. Mag. B Vol. 50 (1984), p.543.

[16] P. K. Sitch, R. Jones, S. ¨Oberg and M. I. Heggie: Phys. Rev. B Vol. 52 (1995), p.4951.

[17] T. A. Arias and J. D. Joannopoulos: Phys. Rev. Lett. Vol. 73 (1994), p.680.

[18] X. Blase, K. Lin, A. Canning, S. G. Louie and D. C. Chrzan: Phys. Rev. Lett. Vol. 84 (2000), p.5780.

[19] A. T. Blumenau, J. Elsner, R. Jones, M. I. Heggie, S. ¨Oberg, T. Frauenheim and P. R. Briddon: J. Phys.: Condens. Matter Vol. 12 (2000), p.10223.

DOI: 10.1088/0953-8984/12/49/322

[20] J. E. Northrup: Appl. Phys. Lett. Vol. 78 (2001), p.2288.

[21] F. Bernadini and L. Colombo: Phys. Rev. B Vol. 72 (2005), p.085215.

[22] P. R. Briddon and R. Jones: Phys. Stat. Sol. Vol. 217 2000, p.131.

[23] G. Henkelman, B. Uberuaga and H. Jonsson: J. Chem. Phys. Vol. 113 (2000), p.9901.

[24] S. Ha, M. Benamara, M. Skowronski and H. Lendenmann: Appl. Phys. Lett. Vol. 83 2003, p.4957 This article was processed using the LATEX macro package with TTP style.