Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution

Nobuyoshi Yashiro; Kazuhiko Kusunoki; Kazuhito Kamei; Mitsuhiro Hasebe; Toru Ujihara; Kazuo Nakajima

doi:10.4028/www.scientific.net/MSF.527-529.115

Paper Titles

Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method
p.99

Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk Crystals
p.103

SiC HTCVD Simulation Modified by Sublimation Etching
p.107

Gas Fed Top-Seeded Solution Growth of Silicon Carbide
p.111

Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution
p.115

Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique
p.119

Growth of Cubic Silicon Carbide Crystals from Solution
p.123

Recent Progress of SiC Hot-Wall Epitaxy and Its Modeling
p.129

Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs
p.135

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Growth of SiC Single Crystal from Si-C-(Co, Fe)...

Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution

Abstract:

We carried out the growth of single crystalline silicon carbide (SiC) from Si-C-X (X= Co, Fe) ternary solutions. These ternary solutions are expected to show large carbon solubility compared with Si solvent (self-flux) by means of CALPHAD (CALculation of PHAse Diagrams) method. We investigated the growth rate and the polytype of the grown crystal from the ternary solutions. Then we found that the growth rate from the ternary solutions is much larger than that from the self-flux. The growth rate from Si-C-Co (Si-C-Fe) system was about 6mm/hr (12mm/hr) while that from the self-flux was only 2mm/hr. The grown crystal from the ternary solutions is classified into 6H that takes over the seed polytype.