Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC

Abstract:

Article Preview

Growth rates and relative stability of 6H- and 4H-SiC have been studied as a function of growth conditions during Halide Chemical Vapor Deposition (HCVD) process using silicon tetrachloride, propane and hydrogen as reactants. The growth temperature ranged from 2000 to 2150 oC. Silicon carbide crystals were deposited at growth rates in the 100-300 μm/hr range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. High resolution x-ray diffraction measurements show that the growth on Si-face of 6H- and C-face of 4H-SiC substrates resulted in single crystal 6H- and 4H-SiC polytype, respectively. The growth rate results have been interpreted using thermodynamic equilibrium calculations.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

27-30

DOI:

10.4028/www.scientific.net/MSF.527-529.27

Citation:

S. Nigam et al., "Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC", Materials Science Forum, Vols. 527-529, pp. 27-30, 2006

Online since:

October 2006

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.