Overview
Sponsors and Committees
Preface
Reduction of Dislocations in the Bulk Growth of SiC Crystals
p.3
p.3
The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals
p.9
p.9
Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical Heaters
p.15
p.15
Halide-CVD Growth of Bulk SiC Crystals
p.21
p.21
Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC
p.27
p.27
Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates
p.31
p.31
Preface
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 527-529)
Online since:
October 2006
Сopyright:
© 2006 Trans Tech Publications Ltd. All Rights Reserved
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