Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Abstract: We have investigated the generation of new dislocations during the epitaxial growth of
4H-SiC layers. Dislocations were mainly propagated...
Abstract: We carried out investigations to elucidate the reasons for polytype changes in 4H. The aim was to sustain polytype stability throughout the...
Abstract: Etching of 4H-SiC wafers in molten KOH as a method for micropipe and dislocation
density analysis was investigated. The obtained results...
Abstract: We succeeded in growing a GaN single crystal substrate with diameter of about two inches using the
Na flux method. Our success is due to...
Abstract: To solve the problem that no preferential chemical etching is available for dislocation revelation from the carbon-face (C-face) of 4H-SiC,...
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