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El-Raghy: Met.
El-Raghy: Scri.
El-Raghy: J.
Fei, et al.: J.
El-Raghy: J.

SIMS (continuous line) and ECV (dotted line) profile from an Al-implanted 6H-SiC sample.
All spectra exhibit an edge luminescence (EL) peak at 391nm and a green-yellow (GYL) band around 570 nm, which according to the bibliography is related to residual doping and particularly to boron.
Note that the intensity ratio between the EL and the GYL peaks is higher for the as-post-implantation-annealed sample in comparison to the as-grown one.
The as-implanted sample AGP4A presents an “attenuated” spectrum (Fig. 5 middle) in comparison to the as-grown one with a higher attenuation for the EL peak.
This is observed for all as-implanted samples whatever the implanted species (Al, N) and/or the polytype (4H-, 6H-).

.%] Alloy Al Ti Nb Cr Mo W Co C B Fe Ni Others IN718 0.56 1.00 5.35 18.9 3.30 - - 0.026 0.0015 Bal. 53.1 - GH761 1.63 3.36 - 13.1 1.66 3.15 - 0.046 0.005 Bal. 44.3 GH4133 0.98 2.90 1.35 20.2 - - - 0.035 0.003 - bal. - K417G 5.30 4.40 - 9.10 3.10 - 10.10 0.180 0.019 - bal. 0.07V 0.06Zr Table 2.
Effect of phosphorus on the 650℃/700MPa stress rupture properties of IN718 alloy P content [%] Life [h] EL [%] RA [%] 0.005P 389 10.7 37.9 0.022P 869* 15.0 44.2 *The stress was increased to 750MPa after 800h Table 4.
Effect of phosphorus on tensile properties of IN718 alloy at room temperature and 650℃ 25℃ 650℃ P content [%] YS [MPa] UTS [MPa] EL [%] RA [%] YS [MPa] UTS [MPa] EL [%] RA [%] 0.005 1265 1420 20.0 52.0 1060 1215 26.5 58.5 0.022 1215 1390 20.3 46.0 1040 1185 23.5 52.5 Fig.2 Effect of phosphorus on the stress rupture property of GH4133 alloy at 700°C/500 MPa Table 5.
Effect of phosphorus on the room temperature and 650℃tensile properties of GH761 alloy 25℃ 650℃ P content [%] YS [MPa] UTS [MPa] EL [%] RA [%] YS [MPa] UTS [MPa] EL [%] RA [%] 0.0007 920 1320 20 24 918 1170 18 25 0.013 930 1320 18 23 908 1150 17 24 0.017 938 1320 18 20 893 1150 19 24 0.023 935 1350 20 24 890 1160 16 25 0.028 940 1320 18 21 900 1155 17 26 0.031 925 1325 19 18 927 1120 15 23 0.040 908 1310 19 23 870 1140 15 18 Table 7.
Mechanical properties of GH761 alloy with 0.023% phosphorus and ASTM8-10 grain size Stress Rupture Properties Tensile Properties 650℃/700MPa 25℃ 650℃ Life [h] EL [%] RA [%] YS [MPa] UTS [MPa] EL [%] RA [%] YS [MPa] UTS [MPa] EL [%] RA [%] 419 35 51 1090 1425 24 42 1020 1230 21 47 Summary Phosphorus was not dissolved in the γ matrix of superalloys and was segregated in the residual liquids seriously during solidification.

A material to be tested, Al-3%Ti is deposited as shown in Fig. 2(b).
Spring Parts • material : Al-3%Ti Body Parts Spring Parts • material : Al-3%Ti Spring Parts • material : Al-3%Ti Body Parts Fig. 1 Schematic illustration of a RF MEMS switch for a mobile phone.
Fig. 6 The micron-sized Al-3%Ti thin film specimen before and after tensile test.
Fatigue test results of the Al-3%Ti thin film.
Gad-El-Hak and Mohamed Gad-El-Hak: The MEMS handbook CRC press (2001) Table 1 Geometry of specimen tested in the present work No.

Finally a LiF buffer layer and Al cathode were deposited at a background pressure of 10 -4 Pa onto the organic films.
All measurements were carried out at room temperature under ambient conditions. 400 500 600 700 EL Intensity (a.u.)
Fig. 3 shows the EL spectra of ITO/NPB(40 nm)/ CBP: Ir(ppy)3: Ir(piq)2(acac) (30 nm)/TPBI(50 nm)/LiF(0.8 nm)/Al with various doping concentrations of Ir(ppy)3 and Ir(piq)2(acac).
The structure of devices is ITO/NPB(40 nm)/ CDBP：Firpic /CBP: Ir(ppy)3: Ir(piq)2(acac) /TPBI (50 nm)/LiF(0.8 nm)/Al.
Figure 4 shows the EL spectra of the WOLEDs with configuration of ITO/NPB(40 nm)/ CDBP：FIrpic (10 nm) /TPBI (4 nm)/CBP: Ir(ppy)3: Ir(piq)2(acac) (20 nm)/TPBI (50 nm)/LiF(0.8 nm)/Al under various operating voltage.

Arrangement of sensors EL-Centro earthquake, Taft earthquake and Shanghai manual earthquake were used to simulate the conditions in the test.
EL-Centro earthquake at 0.6g, 0.7g, 0.8g, 0.9g, 1.0g, 1.2g, 1.3g, 1.4g were later conducted.
After inputting EL-Centro earthquake wave at increasing levels, several column feet were damaged.
(a) EL-Centro (b) Taft (c) SHW Fig.5.
Maximum displacement relative to base under EL-Centro wave Fig.4.

Hyperbolic sine constitutive equation (HSCE) J.M.Zhou et al[7] reviewed the constitutive relationship of material forming in high temperature and discussed what situation they can be used to thoroughly.
(2) 2 el el ij ij kk ij σ βδε µε = +& & &
The following equation can be derived from Eq. 3: 2 el ij ijS eµ=& &
(5) where ijS& is deviatoric stress rate, and el ije& is deviatoric elastic strain rate.
Chen et al: Journal of Plasticity Engineering Vol. 12 (2005), p. 58

[12] Pan Xu, et.al.
Han, at el.
[24] Singh, B., et al.
[25] Li Helin, et.al.
[26] Li Fagen, et.al.

El-Raghy: J Am Ceram Soc.
El-Raghy: Metal Mater Trans A.
Zhu et al.: Rare Metal Mater.
Yang et al.: Mater.
Gou et al.: J Euro Ceram Soc.

From the recorded E-J curves, electrical parameters were calculated, which were defined as following: leakage current IL, current density at a field strength of 10 V/mm; field strength EL, field strength at a current density of 1 μA/cm2; nonlinearity coefficient aL, nonlinearity coefficient at 1 μA/cm2; breakdown field strength EB, field strength at a current density of 0.13 mA/cm2; breakdown nonlinearity coefficient aB, nonlinearity coefficient at 0.13 mA/cm2.
From this figure, it can be seen that with increasing sintering temperature from 1035 to 1175 °C, the nonlinear coefficients of the samples (both of nonlinearity coefficient aL and breakdown nonlinearity coefficient aB) generally increased, but the samples prepared at 1145 or Fig. 3 Electrical parameters of the samples prepared by different sintering systems: (a) nonlinearity coefficient aL, (b) field strength EL, (c) breakdown nonlinearity coefficient aB, (d) breakdown field strength EB, and (e) leakage current IL. 1175 °C almost presented the same value of nonlinear coefficients, implying that the optimum sintering temperature for the varistors with the as-proposed compositions may not be higher than 1145 °C.
Fu, et al: J.
Wang, et al: Acta Metall.
Gauckler, et al: Key Eng.