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Online since: December 2013
Authors: Takuya Komori, Miftakhul Huda, Zulfakri bin Mohamad, Sumio Hosaka, You Yin, Takashi Akahane, Muneyasu Masuda, Jing Liu
Ordering of Self-Assembled Nanodots Improved by Guide Pattern with Low Line Edge Roughness for 5 Tbit/in.2 Patterned Media
Takuya Komoria, Miftakhul Hudab, Takashi Akahane, Muneyasu Masudac, Jing Liud, Zulfakri Bin Mohamade,You Yinf, and Sumio Hosakag
Graduate School of Engineering, Gunma University, 1-5-1 Tenjin, Kiryu, Gunma 376-8515, Japan
E-mail: at11801314@gunma-u.ac.jp, bt12802274@gunma-u.ac.jp, ct09303038@gunma-u.ac.jp, dt11801376@gunma-u.ac.jp, ezulfakri@gunma-u.ac.jp, fyinyou@gunma-u.ac.jp, ghosaka@el.gunma-u.ac.jp
Keywords: self-assembly, Nanodot, Block copolymer, EB writing, HSQ resist, Salty development, Patterned media
Abstract We investigated the possibility of ordering of 12 nm pitced self-assembled nanodots from block copolymer (BCP) improved by the guide pattern with low line edge roughness (LER) for patterned media.
Kim et al. reported salty development was effective to enhance the resolution of HSQ resist pattern [5] and we demonstrated the fine dot arrays by using this development technique [6].
Kim et al. reported salty development was effective to enhance the resolution of HSQ resist pattern [5] and we demonstrated the fine dot arrays by using this development technique [6].
Online since: October 2014
Authors: Gang Sun, Lu Hong
Xu et al. studied three-level supply chain model which retailer regarded CVaR minimum as objective function of the material supplier, manufacturer and retailer[9].
Vol. 3(2013), p. 106, In Chinese [2] Fouad El Ouardighi: International Journal of Production Economics.
Vol. 3(2013), p. 106, In Chinese [2] Fouad El Ouardighi: International Journal of Production Economics.
Online since: June 2009
Authors: Bing Li, Zheng Jia He, Xue Feng Chen
D'Heedene et al. [7] proposed a
novel framework based on second-generation wavelets for solving elliptic partial differential
equations over irregularly spaced meshes on bounded domains.
So the characteristic equation of cracked structure is given as 2 ,0 i KM, (12) where, crack relative size 1/ad , crack relative location 1/eL .
So the characteristic equation of cracked structure is given as 2 ,0 i KM, (12) where, crack relative size 1/ad , crack relative location 1/eL .