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CVD SiC material with many excellent physical and chemical properties was used widely in the field of aerospace as reflector materials.
In addition, CVD SiC thin film materials because of its compact structure, high purity can also be used as precision optical components of semiconductor industry.
To obtain the materials to meet the use requirements, each parameter should be controlled in the process of reaction.
Introduction Fig .1 Schematic diagram of CVD device SiC material had many advantages such as high hardness and outstanding stability at high temperature, which made it highly suitable for high-temperature structural materials, protective coatings and semiconductor devices [1].
Commun. 36(2001)1695-1700 [5] Byung Jin Choi, Dai Ryong Kim, Growth of silicon carbide by chemical vapour deposition, Department of Metallurgical Engineering, Kyung pook [6] A.M.

Effect of phase composition and microstructure of oxide scale on the corrosion resistance of SS400 hot rolled strip Xianliang Zhou1,2,a , Min Zhu2, Xiaozhen Hua2, Zhiguo Ye2, Xia Cui2 and Lun Nie2,b 1Key Laboratory of Nondestructive Test, Ministry of Education, NanChang 330063, China 2School of Material Science and Engineering, NanChang HangKong University, NanChang 330063, China anielun23@126.com,bnielun@163.com Keywords: Hot rolled strip; Oxide scale; Corrosion resistance; Electrochemical impedance spectroscopy Abstract: Different phase compositions and microstructures of oxide scales were formed on the surface of SS400 hot rolled alloys by employing various heat treatment processes.
Acknowledgements This project was financially supported by National Natural Science Foundation of China (50871051), Natural Science Foundation of JiangXi Province of China (2009GZC5009), and Key Laboratory of Nondestructive Test, and Ministry of Education of China (ZD200729003).
Lee, Metals and Materials International.11(2005)131

Controlled Synthesis of Novel Popcorn-Like CeO2 Nanostructures and their Magnetic Properties Xiaofei Niu1,a*, Furong Tu1 1Anhui Key Laboratory of Spintronics and Nanomaterials Research, Suzhou University, Suzhou 234000, Anhui, PR China aszniuxf0123@126.com *Corresponding author, email szniuxf0123@126.com Keywords: Hydrothermal method; Popcorn-like CeO2 nanostructures; Oxygen vacancy; Magnetic properties Abstract.
Material preparation All the reagents were of analytical grade purity and used as received without further purification before the synthesized process.
Wang, Direct synthesis of CeO2 /SiO2 mesostructured composite materials via sol-gel process, Micropor.
Qu, Surface engineering on CeO2 nanorods by chemical redox etching and their enhanced catalytic activity for CO oxidation, Nanoscale, 7 (2015) 11686-11691

An efficient catalysis-oxidation method for the degradation of phenol in wastewater Bin Wu1,a, Duoli Chai2,b 1Huainan Union University, Huainan, Anhui, China 2School of Chemical Engineering, Hefei University of Technology, Hefei, Anhui, China awubin811030@163.com,bcdl1957@sina.com Keywords: Fe3O4 nanocrystals, Degradation, Phenol, H2O2, Wastewater treatment Abstract.
Highly ordered iron-containing mesoporous material, Fe-MCM-41, with 0.5~4 mol% Fe/Si loading was prepared and exhibited high catalytic activity in phenol hydroxylation using H2O2 as oxidant [8], and so on.
Acknowledgements The project was financially supported by Anhui Colleges and Universities Provincial Natural Science key research projects (KJ2008A066).
Journal of Hazardous Materials.

Enhanced internal gettering of iron in n/n+ epitaxial silicon wafer: Effect of high temperature rapid thermal annealing in nitrogen ambient Peng Dong1, Xingbo Liang2, Daxi Tian2, Xiangyang Ma1,a* and Deren Yang1,b+ 1 State Key Laboratory of Silicon Materials and School of Material Science and Engineering, Zhejiang University, Hangzhou 310027, China 2 Ningbo QL Electronics Co., Ltd, Gangdong Road, Ningbo Free Trade Zone, Ningbo 315800, People’s Republic of China a*mxyoung@zju.edu.cn, b+mseyang@zju.edu.cn Keywords: Rapid thermal processing, Nitrogen-doping, n/n+ epitaxial silicon wafer, Oxygen precipitation, Iron gettering.

CFRP laminate is composed of electroconductive carbon fibers and insulating resin, it is a strongly anisotropic electroconductive material.
[2] M.Ueda and A.Todoroki, Key Engineering Materials (to be published)

Kiet Tieu 1,b, Cheng Lu 1,c, Zhengyi Jiang 1,d, and Giovanni D'Alessio 2,e 1 Faculty of Engineering, University of Wollongong, Wollongong, NSW 2522, Australia 2 BlueScope Steel, Port Kembla, NSW 2505, Australia a hongtao@uow.edu.au, bktieu@uow.edu.au, cchenglu@uow.edu.au, djiang@uow.edu.au, e Giovanni.D'Alessio@bhpsteel.com Keywords: Shape; cold strip mill; principal component analysis; neural network Abstract.
Previous research on the shape control showed that the shape control process is a non-linear, time-varying and time-delay system, depending on the coupled effects of many factors, such as the variations of strip materials, geometries, roll and strip temperatures etc [1,2].
Because the shape control process in cold strip mill is a non-linear, time-varying and time-delay system, depending on the coupled effects of many parameters, such as the deflection and flattening of the rolls, changes of the bending force, temperature distribution of the rolls and strip, spray water on the rolls, wear of the rolls, material characteristic of the strip and fault of the incoming slab, a total of 50 variables in Table 1 has been introduced to the developed shape prediction model as the selected variables.
Using 23 key principal components, nearly 92% of the dynamic behavior of the shape in cold strip mill has been described. 0 5 10 15 20 25 30 35 40 45 50 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.00982 0.01123 0.01 Fractional variance Components Fig. 2 Fractional variance of each component -50 0 50 100 150 200 250 300 350 400 450 500 10 -3 10 -2 10 -1 10 0 0.0049 0.0024 0.0038 0.0020 Mean square error Epoch Traing without PCA Testing without PCA Trainging with PCA Testing with PCA Fig. 3 Training and testing processes of neural network with and without PCA The training and testing convergence rates of the shape prediction model based on BP neural network with principal component analysis were compared with those without principal component analysis as shown in Fig. 3.

Canada 5Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio, USA 6Infineon Technologies AG, Neuperlach, Germany apeter.pichler@iisb.fraunhofer.de Keywords: CMOS technology, transient diffusion, transient activation, pattern effects, hot-shield annealing, flash annealing, numerical modeling, process simulation Abstract.
An easy-to-implement performance booster is mechanical strain [2], but also new materials for the transistor gate stack [3] contribute to an improvement of the transistor performance.
This is partly due to the fact that the lateral positions of these extensions define the effective electrical gate length of a transistor, which is a key parameter for any kind of MOS transistor.
Since the channel in this transistor is undoped, the adjustment of the threshold voltage should be done by changing the gate material.
Selinger, et al., Materials Science and Engineering B, vol. 124-125, (2005), pp. 24-31

Table 1: Comparison of Young’s moduli (E) of common implant materials [1,4,12,13].
[11] Huiskes, R., Weinans, H., Rietbergen, B., The relationship between stress shielding and bone resorption around total hip stems and the effects of flexible materials.
[31] Wen, C.E., Yamada, Y., Shimojima, K., Chino, Y., Hosokawa, H., Mabuchi, M., Novel titanium foam for bone tissue engineering.
[33] Kieback, B., Neubrand, A., Riedel, H., Processing techniques for functionally graded materials.
Key Eng Mater 240-242 (2003) 547-550.

Acknowledgement This work has been performed and supported by The Thailand Research Fund (TRF) from March 2009 to March 2011, and Faculty of Engineering, Chulalongkorn University from May 2009 to April 2010.
Shiraishi: Journal of Engineering for Industry.
Yu Prokof’ev: Russian Engineering Reserch.
Somkiat: In Proceedings of The Japan Society for Precision Engineering, Kansai Branch Conference. (2003), pp. 117 [19] D.C.
Suthas: Key Eng Mater.