Process-Induced Diffusion Phenomena in Advanced CMOS Technologies

Abstract:

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The continuous scaling of electron devices places strong demands on device design and simulation. The currently prevailing bulk transistors as well as future designs based on thin silicon layers all require a tight control of the dopant distribution. For process simulation, especially the correct prediction of boron diffusion and activation was always a problem. The paper describes the model developed for boron implanted into crystalline silicon and shows applications to hot-shield annealing and flash-assisted rapid thermal processing.

Info:

Periodical:

Defect and Diffusion Forum (Volumes 258-260)

Edited by:

Andreas Öchsner and José Grácio

Pages:

510-521

DOI:

10.4028/www.scientific.net/DDF.258-260.510

Citation:

P. Pichler et al., "Process-Induced Diffusion Phenomena in Advanced CMOS Technologies", Defect and Diffusion Forum, Vols. 258-260, pp. 510-521, 2006

Online since:

October 2006

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Price:

$35.00

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