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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 258-260Process-Induced Diffusion Phenomena in Advanced...

Process-Induced Diffusion Phenomena in Advanced CMOS Technologies

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Abstract:

The continuous scaling of electron devices places strong demands on device design and simulation. The currently prevailing bulk transistors as well as future designs based on thin silicon layers all require a tight control of the dopant distribution. For process simulation, especially the correct prediction of boron diffusion and activation was always a problem. The paper describes the model developed for boron implanted into crystalline silicon and shows applications to hot-shield annealing and flash-assisted rapid thermal processing.

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Diffusion in Solids and Liquids, DSL-2006 I

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Periodical:

Defect and Diffusion Forum (Volumes 258-260)

Pages:

510-521

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.258-260.510

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Online since:

October 2006

Authors:

Peter Pichler, Alexander Burenkov, Wilfried Lerch, Jürgen Lorenz, Silke Paul, Jürgen Niess, Zsolt Nényei, Jeffrey C. Gelpey, Steve McCoy, Wolfgang Windl, Luis Felipe Giles

Keywords:

CMOS Technology, Flash Annealing, Hot Shield Annealing, Numerical Modeling, Pattern Effects, Process Simulation, Transient Activation, Transient Diffusion

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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