Books by Keyword: Activation Volume

Description: The question of the interrelationship between diffusion and stress is almost as old as the investigation of diffusion itself. Nowadays, the study of various diffusion and solid-state reaction processes in thin films and multilayers is a vital area of research activity in which, inevitably, diffusion-induced or thermal stresses are of primary importance.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: The topic of diffusion science becomes more and more important: this collection of timely papers is divided into seven chapters. The first three are dedicated to macroscopic and microscopic theories of diffusion.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: This fifth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2001 to mid-2002. The scope of this coverage again includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics" series. However, the invited papers this time deal exclusively with staple semiconducting materials: including work on interstitial clusters, intrinsic point defects, and {113} defects in silicon; defect states in InAs quantum dots and defect generation at ZnSe/GaAs interfaces. There are also papers treating a wide range of general themes: such as tracer diffusion in a concentrated lattice gas, defect luminescence in layered chalcogenide semiconductors, defect formation after laser thermal processing, redistribution of point defects in an inhomogeneous temperature field, and very general mathematical techniques for determining basic diffusion parameters.

Description: The aim of the celebrated High Pressure School (HPS) is to provide a platform where both young and experienced researchers can meet and exchange their experiences in high-pressure research and techniques. Since 1996, four schools have been held in Warsaw and the tradition has developed of combining the topic of high pressure techniques with workshops which are related to the rapidly developing fields of high pressure science and technology: chemistry, biology and materials science; with particular attention being paid to nanostructured materials.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: The problem of the interrelationship between diffusion and stresses is as old as the investigation of diffusion itself. Crack formation during surface oxidation, stress-induced diffusion (creep, Gorsky-effect) and the macroscopic deformation of diffusion couples during interdiffusion are well-known classical examples.