The question of the interrelationship between diffusion and stress is almost as old as the investigation of diffusion itself. Nowadays, the study of various diffusion and solid-state reaction processes in thin films and multilayers is a vital area of research activity in which, inevitably, diffusion-induced or thermal stresses are of primary importance.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

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eBook:

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ToC:

Table of contents

Editors:

D. L. Beke, Z. Erdélyi and I. A. Szabó

DOI:

https://doi.org/10.4028/b-eO49zy

THEMA:

TGM

BISAC:

TEC021000

Keywords:

Activation Volume, Diffusion, Grain-Boundary Diffusion, Interdiffusion, Intermetallic Compound (IMC), Ion Implantation, Multilayer, Polycrystalline Silicon, Silicide, Stress

Details:

Proceedings of the International Workshop on Diffusion and Stresses, Lillafüred, Hungary, September 19-22, 2006

Pages:

186

Year:

2007

ISBN-13 (softcover):

9783908451419

ISBN-13 (CD):

9783908454250

ISBN-13 (eBook):

9783038131465

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