Books by Keyword: Intermetallic Compound (IMC)

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The volume of 21 peer reviewed papers addresses the fundamental and applied research focused on various fields of engineering materials including metal alloys, fuel cell, corrosion, computer simulation, glass and ceramics. Some papers cover experimental, theoretical, and manufacturing issues associated with development of new materials and process.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection covers processes and synthesis, crystal chemistry, phase equilibria, thermodynamics, magnetic and electrical properties, theory, electronic structure, chemical bonding and applications of intermetallic compounds, pnictides, chalcogenides, oxides, halides and other solid compounds containing transition elements. It provides an excellent overview of recent advances in topics relevant to solid compounds with transition elements, and will constitute an excellent reference source for scientists and other working in this field.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 8th Hungarian Conference on Materials Science was intended to provide a forum where Hungarian and foreign scientists, interested in metals and alloys, silicates, polymers and composites could have an opportunity to exchange ideas and establish new partnerships. These proceedings consist of 89 selected peer-reviewed papers from the conference.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection of peer-reviewed papers describes the latest advances in, and applications of: basic mechanics and research methods, dynamics and vibration, solid mechanics, fluid mechanics and thermodynamics, biomechanics and environmental mechanics, new materials and advanced materials, functional materials, materials processing technology, welding and mechanical connections, fracture, etc. the work is thus a usefully up-to-date guide to these topics.

Description: Functionally Graded Materials (FGMs) are multifunctional materials which exhibit spatial variations in composition and microstructure; created for the specific purpose of achieving variations in thermal, structural or functional properties. They are presently at the forefront of materials research and are receiving worldwide attention. They enjoy a broad range of application; including, for example, biomechanical, automotive, aerospace, mechanical, civil, nuclear and naval engineering. New applications are continually being discovered and developed.

Description: Diffusion is always central to many scientific and technological fields. From the recognition of Fick´s laws, up to the present day, there have been very important diffusion-based contributions made to fields such as biology, nanosciences, chemistry, physics, etc.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: The question of the interrelationship between diffusion and stress is almost as old as the investigation of diffusion itself. Nowadays, the study of various diffusion and solid-state reaction processes in thin films and multilayers is a vital area of research activity in which, inevitably, diffusion-induced or thermal stresses are of primary importance.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Materials science which focuses on clarifying a material’s properties at the micro- and nano-scale is rapidly accelerating the production of new advanced materials. The production of such materials, developed in this new century, will promote the growth of wholly new industries in a variety of engineering fields.

Description: These volumes contain the contributions presented at DIMAT 2004: the Sixth International Conference on Diffusion in Materials, held in Cracow, under the Patronage of the AGH University of Science and Technology, the Institute of Metallurgy and Materials Science of the Polish Academy of Sciences and the Cracow University of Technology.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: This fifth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2001 to mid-2002. The scope of this coverage again includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics" series. However, the invited papers this time deal exclusively with staple semiconducting materials: including work on interstitial clusters, intrinsic point defects, and {113} defects in silicon; defect states in InAs quantum dots and defect generation at ZnSe/GaAs interfaces. There are also papers treating a wide range of general themes: such as tracer diffusion in a concentrated lattice gas, defect luminescence in layered chalcogenide semiconductors, defect formation after laser thermal processing, redistribution of point defects in an inhomogeneous temperature field, and very general mathematical techniques for determining basic diffusion parameters.