Books by Keyword: Grain-Boundary Diffusion

Description: The question of the interrelationship between diffusion and stress is almost as old as the investigation of diffusion itself. Nowadays, the study of various diffusion and solid-state reaction processes in thin films and multilayers is a vital area of research activity in which, inevitably, diffusion-induced or thermal stresses are of primary importance.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: The topic of diffusion science becomes more and more important: this collection of timely papers is divided into seven chapters. The first three are dedicated to macroscopic and microscopic theories of diffusion.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: This book offers a contemporary overview of nanodiffusion, and details the present state of this rapidly growing field. New conceptions of basic aspects of the diffusion processes occurring at the nanoscale are treated, and many useful insights and results concerning diffusion kinetics in various types of technologically important nanomaterials are presented. The latter include: nanomagnetic materials, consisting of a mixture of magnetic nanoparticles in a residual amorphous magnetic matrix; thin films, bi-layers and multilayers for X-ray or neutron mirrors and for magneto-electronic applications such as GMR; and semiconductor nanosystems for many current and future applications.

Description: This volume contains the proceedings of the conference, 'Diffusion, Segregation and Stresses in Materials (DSS-02)', which was held at the Moscow State Institute of Steel and Alloys, Moscow, Russia. The participants, all acknowledged experts in their field, were drawn from 15 countries and interchanged their expertise via 90 scheduled lectures, plus poster sessions and many informal discussions.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This book covers the principal topics of basic and applied research on diffusion-controlled transport phenomena in metals, ceramics and other systems. Particular attention is paid to diffusional mass transport, reactive diffusion, interdiffusion and phase transformations. Further attention is paid to the practical aspects of applying a deeper understanding of diffusion and reaction mechanisms to the development of materials with improved service properties.

The theory of interdiffusion, reactive diffusion and defect phenomena, the predictions of computer models, and other theoretical studies are extensively covered. Altogether, this again makes the present work an up-to-date and convenient source of information on current trends in the field of solid-state diffusion.

Description: This group of materials tends to be relatively neglected, with regard to defect and diffusion studies, when compared with the other major semiconductor groups such as the elementals (Si, Ge) and the III-V compounds (especially GaAs). This is reflected by the fact that the volume of diffusion data is smaller than that for the other groups (see DDF volumes 153-155 on Si and volumes 157-159 on GaAs). Nevertheless MCT (HgCdTe), here classified as part of the (Cd,Hg)Te system, continues to be of great interest and this is reflected by the contents of this volume. In particular, the first of the original works in this book reviews the topic of diffusion in MCT.