Engineering Research
Materials Science
Engineering Series
Books by Keyword: Annealing
Books
This volume is collected from papers submitted on the 4th International Conference on Smart Materials Technologies (4th ICSMT), held during 21-23 June 2019, Saint-Petersburg, Russia and on the 4th International Conference on Advanced Functional Materials (4th ICAFM) has been successfully held during August 2-5, 2019 in Salt Lake City, USA. The collected articles reflect both theoretical and experimental studies of materials properties for a wide range of their application.
The book summarizes current research and recent developments within the field of production and further processing of flat products. The main topics include new technologies and materials as well as mathematical modelling and simulation of processes and consider industrial issues in the same extend as main research of universities. Based on the close collaboration between industry, research and science the acquisition of research results and their rapid implementation are provided. The papers of this book have been carefully selected after an expertly review by a scientific committee evaluating scientific excellence, relevance and originality. Consequently, this book mainly serves to provide knowledge building and knowledge sharing for users, researches as well as students.
Collection of selected, peer reviewed papers from the GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany.
The 71 papers are grouped as follows: Chapter 1: Growth of Mono- and Multi-Crystalline Silicon; Chapter 2: Passivation and Defect Studies in Solar Cells; Chapter 3: Intrinsic Point Defects and Dislocations in Silicon; Chapter 4: Light Elements in Silicon-Based Materials; Chapter 5: Properties and Gettering of Transition Metals in Silicon; Chapter 6: Radiation- and Impurity-Related Defect Studies in Silicon and Germanium; Chapter 7: Thermal Properties of Semiconductors; Chapter 8: Luminescence and Optical Properties of Semiconductors; Chapter 9: Nano-Sized Layers and Structures; Chapter 10: Wide-Bandgap Semiconductors; Chapter 11: Advanced Methods and Tools for Investigation of Semiconductor Materials
The aims and contents of the ICAPMA 2013 special volume are to facilitate an exchange of information on best practices for Applied Physics and Material Applications, etc. It will provide a chance for physicists and scientists in academia, industry, and government to address the most innovative research and development including technical challenges and to discuss their ideas, results, work in progress and experience on all aspects of Applied Physics and Material Applications.
Recrystallization and grain growth are mechanisms that alter the microstructure without necessarily altering the phase. They are typically driven by high internal elastic and surface energies though sometimes other volumetric energy terms appear. The topic is important to materials engineers and scientists and geologists alike. The former typically aim to exert control over the phenomena for technological and economic benefit while the latter often seek in these mechanisms the answers to questions regarding events long gone. This collection of peer-reviewed papers brings together the most up-to-date knowledge in this field.
In this special issue, we have several papers that are addressing the current status of the fundamental issues related to synthesis and the diverse applications of semiconducting nanowires and nanotubes. The papers related to nanocrystalline polymer materials presented in chapter IV discusses the different aspects associated with the synthesis and properties of polymer materials and provides good scope for researchers to carry out further research on polymer materials. Demonstration about the usage of specific nanocrystalline materials for efficient drug delivery and antimicrobial activities are being discussed in chapter V under the title nanostructured materials for biological applications and will be an impetus for carrying out research in this area. Finally, in the chapter VI papers related to sensors and devices using nanostructured materials give an overview about the fabrication of devices like, field effect transistors, gas sensors and solar cells using nanomaterials.
The 8th International Forum on Advanced Materials Science and Technology (IFAMST-8), was held in Fukuoka Institute of Technology, Fukuoka City, Japan, August 1-4, 2012. The forum attracted about 200 attendees from 10 different countries. The proceedings include 79 peer reviewed papers covering a wide range of up-to-date materials science topics.
Selected, peer reviewed papers from the 2012 International Conference on Engineering Materials (ICEM 2012), December 30-31, 2012, Singapore.
The papers are grouped as follows:
Chapter 1: New and Advanced Materials, Materials Structure and Technologies;
Chapter 2: Material Processing Technology, Technologies of Application of Materials;
Chapter 3: Product Design and Manufacturing Technologies, Engineering Applications;
Chapter 4: Automation, Control and Monitoring Technologies, Software and Information Engineering.
Volume 329 of the journal, Defect and Diffusion Forum, comprises a handy compilation of data on dislocation reactions, and stacking-fault energies for a wide range of materials including carbon, carbides, nitrides, oxides, silica, silicates and borides. It also contains original papers on the Interaction with Vacancies in Tungsten, Defects in Pure Aluminum and 3003 Aluminum Alloy, Nanocrystalline NiAl Alloys Prepared by Mechanical Alloying, Activation Enthalpy for Defect Formation in 5754 Alloys, Defect Analysis of 316LSS during Powder Injection Moulding, Effect of Hydrogen on the Microhardness of Tin Brass Heat Exchanger Tube, Nuclear and Electrical Methods for Estimating the Activation Enthalpy of Defect Formation in 2024 Alloys, Artificial Ageing Effect on 2024 Alloy, Natural Convection Flow Simulation of Nanofluid in a Square Cavity, Theoretical Models for Point Defect Calculations, Diffusion Problem of New Phase Inclusion Growth in Bounded Regions of Oversaturated Solid Solution, Pressureless Sintering and Characterization of Al2O3-SiO2-ZrO2 Composites, Electrical Properties of Zr-Doped La2O3 Nanocrystallites, Effect of Post-Deposition Annealing on Optical Properties of Thermally-Evaporated V2O5 Thin Film, Electrical Conductivity and Phase Transition Studies in the ZrO2-CdO System, Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition, Observation of Dielectric Peaks in Glassy Se70Te20Sn10 Alloy, Spin Hamiltonian Parameters for the Tetragonal [Fe(CN)4Cl2]5- Complex in NaCl.