Books by Keyword: Crystal Growth

Description: This special edition is a helpful resource for researchers, engineers, and practitioners involved in developing, designing, and manufacturing next-generation power electronic components. The articles cover both fundamental principles and applied methodologies, offering a balanced perspective on modern semiconductor technology.

Description: This special edition aims to serve as a valuable resource for researchers and engineers engaged in developing and producing advanced semiconductor power devices. The publication provides readers with a balanced view of this field's scientific foundations and applied methodologies.

Description: The special edition includes articles that represented the latest research results and engineering solutions in the area of silicon carbide wafer manufacturing for power electronics, functional polymer and composite materials for various applications and special microwave absorption materials for defence from electromagnetic radiation. This special edition will be interesting to semiconductor power device production specialists and many branches of applied materials science.

Description: Volume is indexed by Thomson Reuters BCI (WoS).
The electronic properties of solids have become of increasing importance in the age of information technology. The study of solids and materials, while having originated from the disciplines of physics and chemistry, has evolved independently over the past few decades. The classical treatment of solid-state physics, which emphasized classifications, theories and fundamental physical principles, is no longer able to bridge the gap between materials advances and applications. In particular, the more recent developments in device physics and technology have not necessarily been driven by new concepts in physics or new materials, but rather by the ability of engineers to control crystal structures and properties better via advances in crystal growth and patterning techniques. In many cases, new applications simply arise from the adaption of conventional ideas to interdisciplinary areas. One example is that of recent advances which rely heavily upon the availability of the sub-micron technology developed by the semiconductor industry. Another example is the emergence of nanotechnology.

Description: At the present time, Si-based technology is undergoing a transition to the next generation of substrates, having a diameter of 300 mm. The fundamental physical limits are being approached in terms of miniaturization, increased chip area, faster switching speeds, and diversity of operations. This raises the question of the intrinsic limits of the currently predominant semiconductor, silicon, and of those circumstances where it may be advantageous to turn to materials such as GaAs, InP, or SiC.

Description: The importance of epitaxial growth has grown substantially since the early application of semiconductor systems. At present metals, high Tc superconductors, garnets, optical materials and numerous systems grown epitaxially are known.

Description: This collection of extended review papers is based on lectures by some of the best known experts in the field of crystal growth and characterization; the lectures were originally presented at the international school on crystal growth and crystallographic assessment of industrial materials, held in Sitges, Spain, in May 1990.