Gettering and Defect Engineering in Semiconductor Technology VI

Gettering and Defect Engineering in Semiconductor Technology VI

Subtitle:

GADEST 1995

Description:

At the present time, Si-based technology is undergoing a transition to the next generation of substrates, having a diameter of 300 mm. The fundamental physical limits are being approached in terms of miniaturization, increased chip area, faster switching speeds, and diversity of operations. This raises the question of the intrinsic limits of the currently predominant semiconductor, silicon, and of those circumstances where it may be advantageous to turn to materials such as GaAs, InP, or SiC.

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Info:

Editors:
H. Richter, M. Kittler and C. Claeys
THEMA:
TGM
BISAC:
TEC021000
Details:
Proceedings of the 6th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST '95) held in Berlin, Germany, September 1995
Pages:
640
Year:
1996
ISBN-13 (softcover):
9783908450115
ISBN-13 (CD):
9783038599777
ISBN-13 (eBook):
9783035706611
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