Engineering Research
Advanced Engineering Forum
Applied Mechanics and Materials
Engineering Chemistry
Engineering Innovations
Journal of Biomimetics, Biomaterials and Biomedical Engineering
International Journal of Engineering Research in Africa
Materials Science
Advanced Materials Research
Defect and Diffusion Forum
Diffusion Foundations and Materials Applications
Journal of Metastable and Nanocrystalline Materials
Journal of Nano Research
Key Engineering Materials
Materials Science Forum
Nano Hybrids and Composites
Solid State Phenomena
Engineering Series
Advances in Science and Technology
Construction Technologies and Architecture
Engineering Headway
Gettering and Defect Engineering in Semiconductor Technology VI
Subtitle:
GADEST 1995
Description:
At the present time, Si-based technology is undergoing a transition to the next generation of substrates, having a diameter of 300 mm. The fundamental physical limits are being approached in terms of miniaturization, increased chip area, faster switching speeds, and diversity of operations. This raises the question of the intrinsic limits of the currently predominant semiconductor, silicon, and of those circumstances where it may be advantageous to turn to materials such as GaAs, InP, or SiC.
Purchase this book:
eBook
978-3-0357-0661-1
$198.00 *
Print
978-3-908450-11-5
$347.00
not available
eBook+Print
978-3-908450-11-5
$436.00 *
not available
* 1-User Access (Single User-Price). For Multi-User-Price please fill a contact form
Info:
eBook:
ToC:
Editors:
H. Richter, M. Kittler and C. Claeys
THEMA:
TGM
BISAC:
TEC021000
Details:
Proceedings of the 6th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST '95) held in Berlin, Germany, September 1995
Pages:
640
Year:
1996
ISBN-13 (softcover):
9783908450115
ISBN-13 (CD):
9783038599777
ISBN-13 (eBook):
9783035706611
Permissions CCC:
Permissions PLS:
Share: