Books by Keyword: Gallium Nitride

Description: This special edition aims to serve as a valuable resource for researchers and engineers engaged in developing and producing advanced semiconductor power devices. The publication provides readers with a balanced view of this field's scientific foundations and applied methodologies.

Description: The presented book includes articles on research results in the area of semiconductors based on silicon carbide, gallium nitride and related materials that are widely used today for the production of power solid-state electronic devices. The recent technologies of crystal growth and wafer production and processing techniques, properties of completed semiconductor solid-state structures and devices circuitry, including their applications in sensors, mechatronics, and quantum systems, are explored and analysed in this edition. The book will be valuable to engineers and researchers whose activity is related to the development and production of solid-state electronics. The collected here articles were presented at the 20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023, 17-22 September 2023, Sorrento, Italy).

Description: Advanced semiconductor technologies have been making significant advancements through the creation and application of new materials and processes that surpass traditional silicon's limitations. The wide-bandgap semiconductors such as Silicon Carbide and Gallium Nitride offer unprecedented opportunities for advancements in high-power and high-frequency microelectronic devices. The presented special edition will be useful to engineers and researchers whose activity is related to technologies of semiconductor structures growth for power electronics and microelectronics devices production.

Description: Following the long tradition that started in 1987, the International Workshop on Positron Studies of Defects 2024 (PSD-24) will be held in Como, Italy, in the period from September the 1st to 6th, 2024. The aim of the workshop is to provide an opportunity for exchange of the latest results and scientific information concerning the positron interactions with solids and surfaces, the generation of slow positron beams and their applications.

Description: The 70th journal's volume includes articles that present the research and engineering solutions in the mechanics of materials, design of tools and equipment, semiconductors for power electronics and transient stability of photovoltaic systems, managing of construction waste and investigation of the role of concurrent engineering towards managing design changes during the architectural design process. This edition will be helpful to a wide range of engineers from various industrial branches.

Description: This proceedings volume contains the proceedings of all presentations of the 16th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) 2023. The subject matter of the UCPSS symposium is ultra-clean processing, isotropic selective etching and surface preparation technology in all steps of the fabrication of micro-and nano-electronic integrated circuits. This volume describes the recent progress in the field of ultra clean surfaces, surface cleaning and preparation for the production of micro- and nano-electronic integrated circuits and related subjects. This involves a wide variety of surfaces of mixed composition and with nano-topography. The goal of the processes is to obtain nano precise etching and cleaning resulting in ultra clean surfaces with a very high degree of perfection, i.e. with minimal amounts of residues or defects. This comprises different surface and cleaning steps throughout the entire device manufacturing process.

Description: This volume contains papers presented at the 5th International Conference on Mechanical Structures and Smart Materials (5th ICMSSM2019, May 27-28, 2019, Xi’an, China) which reflects research results and development activities in materials science and technologies of materials processing. We hope that this collection will be useful and interesting for many specialists from the mentioned areas of engineering.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The aim of this collection of peer-reviewed papers is to promote the open discussion of SiC hetero-epitaxy as related to the possibility of growing SiC on other materials and of growing various SiC polytypes so as to take advantage of the possibilities of band-gap engineering, These proceedings present the latest developments in Silicon Carbide, and the prospects for Gallium Nitride (GaN on Si, SiC, sapphire and free-standing) and Diamond power electronics. Finally, the progress made in Graphene technology, such as its introduction into devices and its relationship to SiC epitaxial material, is considered.