HeteroSiC & WASMPE 2011

HeteroSiC & WASMPE 2011

Description:

Volume is indexed by Thomson Reuters CPCI-S (WoS).
The aim of this collection of peer-reviewed papers is to promote the open discussion of SiC hetero-epitaxy as related to the possibility of growing SiC on other materials and of growing various SiC polytypes so as to take advantage of the possibilities of band-gap engineering, These proceedings present the latest developments in Silicon Carbide, and the prospects for Gallium Nitride (GaN on Si, SiC, sapphire and free-standing) and Diamond power electronics. Finally, the progress made in Graphene technology, such as its introduction into devices and its relationship to SiC epitaxial material, is considered.

Purchase this book:

eBook
978-3-03813-671-2
$165.00 *
Print
978-3-03785-332-0
eBook+Print
978-3-03785-332-0
$264.00 *
* 1-User Access (Single User-Price). For Multi-User-Price please fill a contact form

Info:

Editors:
Prof. Daniel Alquier
THEMA:
TGM
BISAC:
TEC021000
Details:
Selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France
Pages:
270
Year:
2012
ISBN-13 (softcover):
9783037853320
ISBN-13 (CD):
9783037951484
ISBN-13 (eBook):
9783038136712
Permissions CCC:
Permissions PLS:
Share:

Review from Ringgold Inc., ProtoView: The 46 papers in this volume have been selected from the Fourth Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), which occurred in June 2011 in Tours, France. Contributors working in physics and materials science, microelectronics, nanotechnology, and other sciences in Europe, the US, and Japan discuss silicon carbide heteroepitaxy growth and other materials, polytypes, and bandgap engineering; gallium nitride and diamond power electronics; and advances in graphene technology, its introduction in devices, and its relationships to silicon carbide epitaxial material. Sections include papers on microsystems and microstructures based on silicon carbide, devices on silicon carbide, and device and material characterization.