Engineering Research
Advanced Engineering Forum
Applied Mechanics and Materials
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Engineering Innovations
Journal of Biomimetics, Biomaterials and Biomedical Engineering
International Journal of Engineering Research in Africa
Materials Science
Advanced Materials Research
Defect and Diffusion Forum
Diffusion Foundations and Materials Applications
Journal of Metastable and Nanocrystalline Materials
Journal of Nano Research
Key Engineering Materials
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Nano Hybrids and Composites
Solid State Phenomena
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Books by Keyword: Grain Boundary
Books
Edited by:
Graeme E. Murch, Irina Belova and Prof. Andreas Öchsner
Online since: October 2016
Description: This special topic volume of Diffusion Foundations is entitled Mass Transport in Advanced Engineering Materials. It captures a very wide cross-section of mass transport phenomena in solids and liquids by covering contemporary experimental work and computer simulations in both fundamental and applied contexts.
Edited by:
S.V. Divinski, H. Bracht and N.A. Stolwijk
Online since: May 2015
Description: Collection of selected, peer reviewed papers from the International Conference on Diffusion in Materials (DIMAT 2014), August 17-22, 2014, Münster, Germany.
The 34 papers are grouped as follows:
Chapter 1: Reactions and Interdiffusion in Binary and Multicomponent Systems;
Chapter 2: Ion Transport;
Chapter 3: Defects, Stresses and Relaxation;
Chapter 4: Short-Circuit Diffusion;
Chapter 5: Diffusion Phenomena under Strong Gravitation;
Chapter 6: Diffusion-Related Phenomena;
Chapter 7: Advanced Methods of Diffusion Measurement
The 34 papers are grouped as follows:
Chapter 1: Reactions and Interdiffusion in Binary and Multicomponent Systems;
Chapter 2: Ion Transport;
Chapter 3: Defects, Stresses and Relaxation;
Chapter 4: Short-Circuit Diffusion;
Chapter 5: Diffusion Phenomena under Strong Gravitation;
Chapter 6: Diffusion-Related Phenomena;
Chapter 7: Advanced Methods of Diffusion Measurement
Edited by:
J.D. Murphy
Online since: October 2013
Description: The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.
Edited by:
Matthew Barnett
Online since: March 2013
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Recrystallization and grain growth are mechanisms that alter the microstructure without necessarily altering the phase. They are typically driven by high internal elastic and surface energies though sometimes other volumetric energy terms appear. The topic is important to materials engineers and scientists and geologists alike. The former typically aim to exert control over the phenomena for technological and economic benefit while the latter often seek in these mechanisms the answers to questions regarding events long gone. This collection of peer-reviewed papers brings together the most up-to-date knowledge in this field.
Recrystallization and grain growth are mechanisms that alter the microstructure without necessarily altering the phase. They are typically driven by high internal elastic and surface energies though sometimes other volumetric energy terms appear. The topic is important to materials engineers and scientists and geologists alike. The former typically aim to exert control over the phenomena for technological and economic benefit while the latter often seek in these mechanisms the answers to questions regarding events long gone. This collection of peer-reviewed papers brings together the most up-to-date knowledge in this field.
Edited by:
E.J. Palmiere and B.P. Wynne
Online since: April 2012
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Recrystallization and grain growth are fundamental aspects of microstructure evolution during the annealing and thermomechanical processing of engineering materials. These static and dynamic phenomena are of major scientific interest and of great importance in a wide range of industrial processes and applications. This collection of peer-reviewed papers brings together the most up-to-date knowledge in this field.
Recrystallization and grain growth are fundamental aspects of microstructure evolution during the annealing and thermomechanical processing of engineering materials. These static and dynamic phenomena are of major scientific interest and of great importance in a wide range of industrial processes and applications. This collection of peer-reviewed papers brings together the most up-to-date knowledge in this field.
Edited by:
I. Bezverkhyy, S. Chevalier and O. Politano
Online since: April 2012
Description: The International Conference on Diffusion in Materials (DIMAT) is the benchmark conference series for diffusion in solids. DIMAT 2011 was organized by the University of Bourgogne in association with CNRS, Dijon (France). The conference showcased new results concerning theoretical tools as well as applied research approaches. Diffusion processes affect all types of materials: nanomaterials, materials for energy, metallurgy, glasses and ceramics, but each requires its own numerical tools.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume comprises most of the contributions presented at DIMAT 2011: 4 plenary lectures delivered by famous high-level scientists plus 88 contributions in the form of keynote lectures, talks and posters.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume comprises most of the contributions presented at DIMAT 2011: 4 plenary lectures delivered by famous high-level scientists plus 88 contributions in the form of keynote lectures, talks and posters.
Edited by:
Prof. Andreas Öchsner and Graeme Murch
Online since: March 2012
Description: Volume is indexed by Thomson Reuters BCI (WoS).
The present topical volume presents a representative cross-section of some recent advances made in the area of diffusion. The range of topics covered is very large, and, this reflects the enormous breadth of the topic of diffusion. The areas covered include diffusion in intermetallics, phenomenological diffusion theory, diffusional creep, kinetics of steel-making, diffusion in thin films, precipitation, diffusional phase transformations, atomistic diffusion simulations, epitaxial growth and diffusion in porous media.
The present topical volume presents a representative cross-section of some recent advances made in the area of diffusion. The range of topics covered is very large, and, this reflects the enormous breadth of the topic of diffusion. The areas covered include diffusion in intermetallics, phenomenological diffusion theory, diffusional creep, kinetics of steel-making, diffusion in thin films, precipitation, diffusional phase transformations, atomistic diffusion simulations, epitaxial growth and diffusion in porous media.
Edited by:
T. Chandra, M. Ionescu and D. Mantovani
Online since: January 2012
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
These are the proceedings of the 7th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC’2011 - which was held during the 1-5 August 2011 in Quebec City, Canada. The conference brought together researchers and engineers/technologists working on various aspects of the processing, fabrication, structure/property evaluation and applications of both ferrous and non-ferrous materials; including biomaterials and smart/intelligent materials. The contents are thus and excellent and up-to-date guide to these subjects.
These are the proceedings of the 7th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC’2011 - which was held during the 1-5 August 2011 in Quebec City, Canada. The conference brought together researchers and engineers/technologists working on various aspects of the processing, fabrication, structure/property evaluation and applications of both ferrous and non-ferrous materials; including biomaterials and smart/intelligent materials. The contents are thus and excellent and up-to-date guide to these subjects.
Edited by:
Robert Schaller and Prof. Daniele Mari
Online since: January 2012
Description: The peer-reviewed papers in this special issue of Solid State Phenomena were selected from the 16th International Conference on Internal Friction and Mechanical Spectroscopy, ICIFMS-16, held on July 3 – 8, 2011, in Lausanne, Switzerland.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The proceedings aimed at attracting newcomers to this field of research in order to appreciate the potential of anelastic methodologies in the investigation of advanced materials and new phenomena. Scientists who are already involved in the field will also find here ideas and inspiration for new experiments and theories.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The proceedings aimed at attracting newcomers to this field of research in order to appreciate the potential of anelastic methodologies in the investigation of advanced materials and new phenomena. Scientists who are already involved in the field will also find here ideas and inspiration for new experiments and theories.
Edited by:
W. Jantsch and F. Schäffler
Online since: August 2011
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The papers contained herein cover the most important and timely issues in the field of “Gettering and Defect Engineering in Semiconductor Technology”, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.
The papers contained herein cover the most important and timely issues in the field of “Gettering and Defect Engineering in Semiconductor Technology”, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.