Books by Keyword: Grain Boundary Diffusion

Description: This is special topic volume “Recent Trends in Mass Transport in Solids and Liquids” focuses on the mass transport in its broadest sense spanning the atomic scale right up to the macro scale. There is also a special focus on real engineering applications of mass transport.

Description: The International Conference on Diffusion in Materials (DIMAT) is the benchmark conference series for diffusion in solids. DIMAT 2011 was organized by the University of Bourgogne in association with CNRS, Dijon (France). The conference showcased new results concerning theoretical tools as well as applied research approaches. Diffusion processes affect all types of materials: nanomaterials, materials for energy, metallurgy, glasses and ceramics, but each requires its own numerical tools.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume comprises most of the contributions presented at DIMAT 2011: 4 plenary lectures delivered by famous high-level scientists plus 88 contributions in the form of keynote lectures, talks and posters.

Description: This special collection concentrates on three basic topics, the 35 peer-reviewed papers being grouped into: 1. Grain Boundary Diffusion, Segregation and Stresses, 2. Bulk Diffusion and Phase Formation and 3. Diffusion-Controlled Processes. It provides succinct and timely coverage of these topics.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Diffusion is always central to many scientific and technological fields. From the recognition of Fick´s laws, up to the present day, there have been very important diffusion-based contributions made to fields such as biology, nanosciences, chemistry, physics, etc.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: This special issue contains selected peer-reviewed papers which were presented at the Third International Conference on Diffusion in Solids and Liquids (DSL-2007), held at the Hotel Pestana Alvor Praia, Algarve, Portugal during the 4th-6th July, 2007.

Description: This ninth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VIII (Volumes 245-246) and the end of January 2007 (journal availability permitting).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: These volumes contain the contributions presented at DIMAT 2004: the Sixth International Conference on Diffusion in Materials, held in Cracow, under the Patronage of the AGH University of Science and Technology, the Institute of Metallurgy and Materials Science of the Polish Academy of Sciences and the Cracow University of Technology.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: This issue covers, in the form of abstracts, the work which has been reported between the previous retrospective and the end of 2002. The choice of abstracted papers is guided by criteria such as accessibility, data content and description of important new techniques, phenomena or anomalies. There is also a thorough coverage of qualitative features of diffusion and defect phenomena, computer modelling and theory. The volume also includes invited review and experimental papers which treat a wide range of topics in the field.

Description: This fifth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2001 to mid-2002. The scope of this coverage again includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics" series. However, the invited papers this time deal exclusively with staple semiconducting materials: including work on interstitial clusters, intrinsic point defects, and {113} defects in silicon; defect states in InAs quantum dots and defect generation at ZnSe/GaAs interfaces. There are also papers treating a wide range of general themes: such as tracer diffusion in a concentrated lattice gas, defect luminescence in layered chalcogenide semiconductors, defect formation after laser thermal processing, redistribution of point defects in an inhomogeneous temperature field, and very general mathematical techniques for determining basic diffusion parameters.