Books by Keyword: Interdiffusion

Description: Diffusion-controlled processes still remain the most important and interesting phenomena in materials science. Among the problems which are currently to the fore, are the synergy of diffusion and morphological evolution, the initial stages of solid-state reactions, the analysis of nano- materials and related phenomena, thermo- and electromigration, and the reliability of solder joints and interconnects in microelectronic devices. A number of challenging problems still remain within the “classical” areas of nucleation, reactive- and inter-diffusion, phase growth in multicomponent and binary systems, and decomposition and ripening.
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Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The inspiration for this book was to gather together the efforts of those physicists, materials scientists/engineers and other scientists who are carrying out interdisciplinary research into multiscale modelling of time-evolving phenomena in materials.

Description: The continued development of advanced materials and processes requires an intimate understanding of diffusion mechanisms, and having the ability to model the diffusion-controlled phenomena which occur within materials during processing.
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Description: The question of the interrelationship between diffusion and stress is almost as old as the investigation of diffusion itself. Nowadays, the study of various diffusion and solid-state reaction processes in thin films and multilayers is a vital area of research activity in which, inevitably, diffusion-induced or thermal stresses are of primary importance.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: The diffusion of atoms is an inherent feature of matter, and the rules which describe the phenomenon are important from both the purely practical and the theoretical perspectives: it is a major rate-controlling process in phase transformations, crystal growth, recrystallization and recovery, creep, sintering, surface treatment and many other situations. Being typically a non-equilibrium macroscopic phenomenon, diffusion can be properly described in terms of the thermodynamics of irreversible processes. At the same time, phenomenological diffusion characteristics represent the mean values of microscopic parameters and reflect the microscopic structure of matter. In the latter case, they contribute to providing a deeper understanding of the physical background to the observed behavior of matter in general.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: These volumes contain the contributions presented at DIMAT 2004: the Sixth International Conference on Diffusion in Materials, held in Cracow, under the Patronage of the AGH University of Science and Technology, the Institute of Metallurgy and Materials Science of the Polish Academy of Sciences and the Cracow University of Technology.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: This seventh volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VI (Volumes 224-225) and the end of November 2004 (allowing for vagaries of journal availability).

Description: This sixth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective V (Volumes 213-215) and the end of October 2003.

Description: This fifth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2001 to mid-2002. The scope of this coverage again includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics" series. However, the invited papers this time deal exclusively with staple semiconducting materials: including work on interstitial clusters, intrinsic point defects, and {113} defects in silicon; defect states in InAs quantum dots and defect generation at ZnSe/GaAs interfaces. There are also papers treating a wide range of general themes: such as tracer diffusion in a concentrated lattice gas, defect luminescence in layered chalcogenide semiconductors, defect formation after laser thermal processing, redistribution of point defects in an inhomogeneous temperature field, and very general mathematical techniques for determining basic diffusion parameters.