Books by Keyword: Self-Diffusion

Description: The advancement of material engineering over the last few decades has allowed for the development of modern metallic and ceramic construction materials, composites, nanomaterials and various kinds of coatings with desired performance characteristics. They form the basis for the development of the automotive industry, the aviation industry, the chemical equipment industry, etc. They can function in ever higher temperatures and aggressive environments. On the other hand, the advancement of electronics requires the development of new and cheaper materials: semiconductors, insulators, materials with magnetic, ferrimagnetic or piezoelectric properties, etc. The desired properties of materials or their surface layers depend on chemical composition, dopants, and the concentration of point defects, through which the transport of ions and electrons takes place. The functional properties also depend on the nuances of production technologies which allow to obtain a specific texture and a desired concentration of ionic and electronic point defects. The monograph follows up on the issues related to the concentration of charge carriers in pure and doped oxides. Based on the diagrams of the concentration of point defects, the calculation results of the concentration of charge carriers and their mobility are presented, using the results of the studies on the electrical conductivity and the thermoelectric power in some specific oxides of 3d metals. In turn, the results of calculations of the ionic defect diffusion coefficients, conducted using the coefficients of self-diffusion and chemical diffusion as well as the concentration of ionic defects in these oxides, are presented. The given material will be useful to a wide range of researchers and developers of new materials with a wide range of required properties.

Description: Diffusion is always central to many scientific and technological fields. From the recognition of Fick´s laws, up to the present day, there have been very important diffusion-based contributions made to fields such as biology, nanosciences, chemistry, physics, etc.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: The diffusion of atoms is an inherent feature of matter, and the rules which describe the phenomenon are important from both the purely practical and the theoretical perspectives: it is a major rate-controlling process in phase transformations, crystal growth, recrystallization and recovery, creep, sintering, surface treatment and many other situations. Being typically a non-equilibrium macroscopic phenomenon, diffusion can be properly described in terms of the thermodynamics of irreversible processes. At the same time, phenomenological diffusion characteristics represent the mean values of microscopic parameters and reflect the microscopic structure of matter. In the latter case, they contribute to providing a deeper understanding of the physical background to the observed behavior of matter in general.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: These volumes contain the contributions presented at DIMAT 2004: the Sixth International Conference on Diffusion in Materials, held in Cracow, under the Patronage of the AGH University of Science and Technology, the Institute of Metallurgy and Materials Science of the Polish Academy of Sciences and the Cracow University of Technology.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: This book covers, on close to 2000 pages, all aspects of basic and applied diffusion research in all important engineering materials, including metals and intermetallics, elemental and compound semiconductors, amorphous and nanocrystalline materials and oxides.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: This is the second issue, following DDF164, to cover recent progress in this field. The contents are contiguous with those of DDF164, and extend to late November or December 1999 (depending upon journal publication dates). As usual, priority in abstracting has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies, although there is also extensive coverage of more qualitative features of diffusion and defect phenomena, and of the predictions of computer models.

Description: This work, like others in the series (Defects and Diffusion inSemiconductors and Defects and Diffusion in Ceramics), continues a 30-year program which has the aim of succinctly summarizing progress in the fields of diffusion and defect research.

Description: Journal issue

Description: These proceedings comprise the papers presented at the international conference on 'Diffusion in Materials (DIMAT-96)' held at Schloss Nordkirchen, Germany, August 1996 - the largest international diffusion conference so far held.
The two-volume set therefore covers a very broad spectrum of topics. From the materials point of view, metals, alloys, intermetallics, elemental and compound semiconductors, amorphous materials, nonmetals such as fast ionic conductors, oxides, nitrides, polymers and even melts were discussed.