Engineering Research
Materials Science
Engineering Series
HeteroSiC & WASMPE 2013
Description:
The 25 papers are grouped as follows:
Chapter 1: 3C-SiC – Epitaxy, Characterization and Devices;
Chapter 2: 4H-SiC and 15R-SiC – Growth and Characterization;
Chapter 3: Related Materials – Gallium Nitride, Graphene and Silicon;
Chapter 4: SiC Devices and Device Processing
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Review from Ringgold Inc., ProtoView:
As in previous years, The International Workshop on Silicon Carbide Hetero-Epitaxy (HeteroSiC) and the Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (WASMPE) were held jointly. The 25 papers that emerged cover 3C-SiC—epitaxy, characterization, and devices; 4H-SiC and 15R-SiC—growth and characterization; related materials—gallium nitride, graphene, and silicon; and SiC devices and device processing. Among specific topics are strain evaluation and fracture properties of hetero-epitaxial single crystal 3C-SiC squared membrane, anti-reflective porous silicon features by substrate conformal imprint lithography for silicon photovoltaic applications, and the impact of oxygen flow rate on the oxide thickness and interface trap density in 4H-SiC MOS capacitors.
Ringgold Subjects:
— Carbon
— Materials science
— Semiconductors