Simulation and Typical Application of Multi-Step Diffusion Method for MEMS Device Layers

Ling Yun Wang; Ru Hai Zhou; Yi Fang Liu; Cheng Zheng; Jian Fa Cai; Yong He

doi:10.4028/www.scientific.net/KEM.645-646.341

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 645-646Simulation and Typical Application of Multi-Step...

Simulation and Typical Application of Multi-Step Diffusion Method for MEMS Device Layers

Abstract:

In MEMS device, heavily boron doped layers are widely used as structural layers. For the manufacture of the thick heavily boron doped layer (boron concentration ≥ 5×10¹⁹ cm^-3), conventional two-step method exposes disadvantages of low efficiency and high energy consumption. Hence, multi-step method is introduced to improve the energy efficiency. In our study, simulation of diffusion in silicon is carried out to compare multi-step method with conventional method. The simulation reveals that multi-step method obtains more quantity of boron dopants and shows better potential to fabricate thick heavily boron doped layers, compared to conventional method within the same total diffusion time. As a typical application of the multi-step method, a butterfly-shape resonant is fabricated.

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Periodical:

Key Engineering Materials (Volumes 645-646)

Pages:

341-346

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.645-646.341

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Online since:

May 2015

Authors:

Ling Yun Wang*, Ru Hai Zhou, Yi Fang Liu, Cheng Zheng, Jian Fa Cai, Yong He

Keywords:

Boron Etch-Stop Technique, Heavily Boron Doped Layers, Multi-Step Diffusion Method

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References

[1] Wang J, Chen D, Liu L, et al. A micromachined resonant pressure sensor with DETFs resonator and differential structure[C]/Sensors, 2009 IEEE. IEEE, 2009: 1321-1324.

DOI: 10.1109/icsens.2009.5398404

Google Scholar

[2] Cho I J, Park E C, Yoon E. AFM probe tips using heavily boron-doped silicon cantilevers realized in a< 110> bulk silicon wafer[C]. Microprocesses and Nanotechnology Conference, 2000 International. IEEE, 2000: 230-231.

DOI: 10.1109/imnc.2000.872729

Google Scholar

[3] Seo K S, Cho Y H, Youn S K. A bulk-micromachined silicon micromirror for tunable optical switch applications[C]. Emerging Technologies and Factory Automation, 1996. EFTA'96. Proceedings., 1996 IEEE Conference on. IEEE, 1996, 2: 404-407.

DOI: 10.1109/etfa.1996.573626

Google Scholar

[4] Ning X J. Distribution of residual stresses in boron doped p+ silicon films[J]. Journal of the Electrochemical Society, 143(1996) 3389-3393.

DOI: 10.1149/1.1837217

Google Scholar

[5] Bassous E, Lamberti A C. Highly selective KOH-based etchant for boron-doped silicon structures[J]. Microelectronic Engineering, 9(1989) 167-170.

DOI: 10.1016/0167-9317(89)90039-7

Google Scholar

[6] Daoheng Sun, Haoer Zhang, Zhan Zhan, Jie He, Xiaohui Du, Lingyun Wang. A Heavily Boron-Doping Method for Fabrication of Thick MEMS Structural Layer [J]. Nanotechnology and Precision Engineering，11(2013) 314-319.

Google Scholar

[7] Vick G L, Whittle K M. Solid solubility and diffusion coefficients of boron in silicon[J]. Journal of the Electrochemical Society, 116(1969) 1142-1144.

DOI: 10.1149/1.2412239

Google Scholar

[8] Bagratishvili G D, Dzhanelidze R B, Jishiashvili D A, et al. Boron diffusion from a reactively sputtered glass source in Si and SiO2[J]. physica status solidi (a), 56(1979) 27-35.

DOI: 10.1002/pssa.2210560103

Google Scholar