Papers by Keyword: Local Anodic Oxidation

Abstract: A simple method for fabricating lateral Si diodes with various gap widths were designed using the special properties of anisotropic TMAH wet etching and local anodic oxidation. The electrical performance of lateral diode was characterized using an HP4156c semiconductor parameter analyzer (SPA300HV, Agilent) at room temperature in a vacuum environment lower than 10^-8 Torr. The emission current from the silicon emitter cathode was measured as a function of the applied anode voltage. The effect of changing the anode-cathode gap was observed in the I-V characteristics, with a distinct reduction in the device turn-on with a decrease in the gap. For narrowed nanogaps from 55 nm to 35 nm, the turn-on voltage was decreased from 21 V to 16 V. Values of field enhancement factor β and emitting area A for different gap width were measured using Fowler-Nordheim plot. Our results indicate that β reduces and emitting area increases with increasing of gap width.

Abstract: In this work, local oxidation behavior in phosphorous ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The AFM-local oxidation (LO) has been performed on the implanted samples, with and without activation anneal, using varying applied bias (15/20/25 V). It has been clearly shown that the post-implantation annealing process at 1650 oC has a great impact on the local oxidation rate by electrically activating the dopants and by modulating the surface roughness. In addition, the composition of resulting oxides changes depending on the doping level of SiC surfaces.

Abstract: A method to easily and economically manufacture more precise patterns compared with usual MEMS technique has been searched for. Under such circumstances, this research aims to clarify the formation of nano-scale protrusion structure produced by local anodic oxidation on Si wafer surface in expectation of the nano/micro mold production for nanoimprint lithography in future. In this report, the influences of contact width and distance between probe tip and Si wafer surface (distance between terminals) on the size and shape of protrusion patterns were examined in order to clarify the fundamental phenomena in local anodic oxidation. A scanning probe microscope equipped with a current measuring unit was utilized in local anodic oxidation experiments. As a result, it was confirmed that the size of generated protrusion structure became larger with increasing the contact width and became smaller with increasing the distance between probe tip and Si wafer surface. These facts will be useful in producing 3-D nanostructures in future.