Fundamental Research on Generation of Nanostructure by Means of Local Anodic Oxidation

Abstract:

A method to easily and economically manufacture more precise patterns compared with usual MEMS technique has been searched for. Under such circumstances, this research aims to clarify the formation of nano-scale protrusion structure produced by local anodic oxidation on Si wafer surface in expectation of the nano/micro mold production for nanoimprint lithography in future. In this report, the influences of contact width and distance between probe tip and Si wafer surface (distance between terminals) on the size and shape of protrusion patterns were examined in order to clarify the fundamental phenomena in local anodic oxidation. A scanning probe microscope equipped with a current measuring unit was utilized in local anodic oxidation experiments. As a result, it was confirmed that the size of generated protrusion structure became larger with increasing the contact width and became smaller with increasing the distance between probe tip and Si wafer surface. These facts will be useful in producing 3-D nanostructures in future.

• Periodical: Key Engineering Materials (Volumes 389-390)
• Pages: 424-429
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.389-390.424
• Online since: September 2008
• Authors: Yumetaka Suehisa, Toshiaki Aoki, Jun Shimizu, Li Bo Zhou, Hiroshi Eda
• Keywords: Contact Width, Distance Between Terminals, Local Anodic Oxidation, Protrusion Pattern, Scanning Probe Microscope, Si Wafer, Voltage

References

[1] S.Y. Chou, P. R. Krauss, P. J. Renstrom: Imprint of Sub-25 nm Vias and Trenches in Polymers, Appl. Phys. Lett. Vol. 67 (1995), pp.3114-3116.

DOI: 10.1063/1.114851

[2] J.A. Dagata, J. Schneir, H.H. Harary, C.J. Evans, M.T. Postek, J. Bennet: Modification of Hydrogenpassivated Silicon by a Scanning Tunnelling Microscope Operating in Air, Appl. Phys. Lett. Vol. 56 (1990), p.2001-(2003).

DOI: 10.1063/1.102999

[3] N. Barniol, F. Pe´rez-Murano, X. Aymerich: Modification of HF-treated silicon (100) surfaces by scanning microscopy in air under imaging conditions, Appl. Phys. Lett. Vol. 61 (1992), pp.462-464.

DOI: 10.1063/1.107885

[4] E.S. Snow, P.M. Campbell, P.J. McMarr: Fabrication of silicon nanostructures with a scanning tunneling microscope, Appl. Phys. Lett. Vol. 63 (1993), pp.749-751.

DOI: 10.1063/1.109924

[5] H. Sugimura, T. Yamamoto, N. Nakagiri, M. Miyashita, T. Onuki, Maskless patterning of silicon surface based on scanning tunnelling microscope tip-induced anodization and chemical etching, Appl. Phys. Lett. Vol. 65 (1994) pp.1569-1571.

DOI: 10.1063/1.112917

[6] P.A. Fontaine, E. Dubois, D. Stie´venard: Characterization of Scanning Tunneling Microscopy and Atomic Force Microscopy-based Techniques for Nanolithography on Hydrogen-passivated Silicon, J. Appl. Phys. Vol. 84 (1998), pp.1776-1781.

DOI: 10.1063/1.368334

[7] P. Avouris, T. Hertel, R. Martel: Atomic Force Microscope Tip-induced Local Oxidation of Silicon: Kinetics, Appl. Phys. lett. Vol. 71 (1997), pp.285-287.

DOI: 10.1063/1.119521

[8] E.B. Cooper, S.R. Manalis, H. Fang, H. Dai, K. Matsumoto, S.C. Minne, T. Hunt, C.F. Quate: Terabit -per-Square-Inch Data Storage with the Atomic Force Microscope, Appl. Phys. Lett. Vol. 75 (1999), pp.3566-3568.

DOI: 10.1063/1.125390