Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm2

Ryosuke Ishii; Koji Nakayama; Hidekazu Tsuchida; Yoshitaka Sugawara

doi:10.4028/www.scientific.net/MSF.600-603.1015

Paper Titles

Observation of Crystalline Defects Causing pn Junction Reverse Leakage Current
p.999

Comparative Evaluation of Anode Layers on the Electrical Characteristics of High Voltage 4H-SiC PiN Diodes
p.1003

Self-Heating of 4H-SiC PiN Diodes at High Current Densities
p.1007

Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes
p.1011

Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm²
p.1015

Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes
p.1019

Annealing Effect on Characteristics of p⁺n 4H-SiC Diode Formed by Al Ion Implantation
p.1023

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p⁺n 4H-SiC Diodes
p.1027

Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies
p.1031

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Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm²

Abstract:

This paper reports on the achievement of high-power 4H-SiC Zener diodes which have a high-doped pn junction with a large active area of 4 mm x 4 mm. The temperature coefficient of the breakdown voltage is as small as 5.7x10-5 1/K (positive) in the temperature range 20-300°C. In addition, reverse power capabilities of 6.3 kW (40 kW/cm2) at 20°C and 6.0 kW (38 kW/cm2) at 300°C during rectangular pulsed power operation (tw = 1 ms) have been achieved without device failure.