Island Formation of SiC Film on Striated Si(001) Substrates

Yoshimine  Kato; Kazuo Sakumoto

doi:10.4028/www.scientific.net/MSF.600-603.227

Paper Titles

Growth of 3C-SiC on Si: Influence of Process Pressure
p.211

Void Formation in Differently Oriented Si in the Early Stage of SiC Growth
p.215

3C-SiC on Si Substrates Using Pendeo-Epitaxial Growth
p.219

Influence of Growth Parameters on the Residual Strain in 3C-SiC Epitaxial Layers on (001) Silicon
p.223

Island Formation of SiC Film on Striated Si(001) Substrates
p.227

Structural and Morphological Characterization of 3C-SiC Films Grown on (111), (211) and (100) Silicon Substrates
p.231

Heteroepitaxial Growth of 3C-SiC on Si (111) at Low Substrate Temperature by Plasma Assisted CVD
p.235

Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing
p.239

3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.
p.243

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Island Formation of SiC Film on Striated Si(001) Substrates

Abstract:

SiC growth on as-received and striated Si(001) substrates was studied. SiC films were grown by pulsed-jet chemical vapor deposition using monomethylsilane as a gas source at 780°C. Two kinds of Si surfaces were prepared. One was an as-received Si(001) surface and the other was an striated (scratched) Si(001) surface. It was found that nucleation rate of SiC is quite different between these two kinds of surfaces. The film growth rate was very low for the as-received Si(001) surface compared with the striated surface, and after 8 hours of growth hardly any film was grown and only square-shaped islands were observed. On the other hand, for the undulant substrate about 100nm thick 3C-SiC film was grown after 8 hours of deposition. This film growth rate difference appears to be due to the difference in density of nucleation sites. For the as-received Si(001) surface, nucleation site density appears to be quite small due to the atomically flat surface. On the other hand, for the undulant surface, nucleation site density was large enough for the film to grow faster.