Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

Yong Mei Zhao; Guo Sheng Sun; Xing Fang Liu; Jia Ye Li; Wan Shun Zhao; L. Wang; Jin Min Li; Yi Ping Zeng

doi:10.4028/www.scientific.net/MSF.600-603.251

Paper Titles

Heteroepitaxial Growth of 3C-SiC on Si (111) at Low Substrate Temperature by Plasma Assisted CVD
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Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing
p.239

3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.
p.243

Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas
p.247

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer
p.251

Characteristics of Polycrystalline 3C-SiC Thin Films Grown on AlN Buffer Layer by CVD
p.255

Aspects of Dislocation Behavior in SiC
p.261

Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy
p.267

Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes
p.273

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Heteroepitaxial Growth of 3C-SiC on Si (111)...

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

Abstract:

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.