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The Study of High Temperature Annealing of a-SiC:H Films

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Abstract:

A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 Å) gold film was evaporated on the half area of the a- SiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 0C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.

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Advanced Materials Forum III View Preview

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Periodical:

Materials Science Forum (Volumes 514-516)

Pages:

18-22

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.514-516.18

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Online since:

May 2006

Authors:

Shibin Zhang, Z. Hu, Leandro Raniero, X. Liao, Isabel Ferreira, Elvira Fortunato, Paula M. Vilarinho, Luís Pereira, Rodrigo Martins

Keywords:

High Temperature Annealing, Silicon Carbide (SiC), Thin Film

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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