Paper Titles
PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces
p.1047
Process Optimisation for <11-20> 4H-SiC MOSFET Applications
p.1051
Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2
p.1055
Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion
p.1059
Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs
p.1063
High Temperature Annealing Study of Al2O3 Deposited by ALCVD on n-Type 4H-SiC
p.1067
Experimental and First-Principles Studies of the Band Alignment at the HfO2/4H-SiC (0001) Interface
p.1071
Structural and Morphological Properties of Ultrathin HfO2 Dielectrics on 4H-SiC (0001)
p.1075
Low Temperature Deposition of HfO2 Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition
p.1079

Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs

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Abstract:

The effects of gamma radiation on field effect mobility and threshold voltage have been studied for lateral n-channel 4H-SiC MOSFETs passivated with nitric oxide. MOS capacitors (n and p) and n-channel lateral MOSFETs were irradiated unbiased (floating contacts) for a total gamma dose of 6.8Mrad (Si). The MOS capacitors were used to study the radiation-induced interface traps and fixed oxide charge that affect the performance of the MOSFETs. Radiationinduced interface traps were observed near the SiC valence band edge and just above mid-gap, and field effect channel mobility was reduced by 18-20% following irradiation. Even so, 4HMOSFETs appear to be more radiation tolerant than Si devices.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1063-1066

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1063

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Online since:

October 2006

Authors:

Ayayi Claude Ahyi, S.R. Wang, John R. Williams

Keywords:

Gamma Irradiation, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), MOS Capacitor, NO Annealing

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

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