Paper Titles
Process Optimisation for <11-20> 4H-SiC MOSFET Applications
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Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2
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Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion
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Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs
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High Temperature Annealing Study of Al2O3 Deposited by ALCVD on n-Type 4H-SiC
p.1067
Experimental and First-Principles Studies of the Band Alignment at the HfO2/4H-SiC (0001) Interface
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Structural and Morphological Properties of Ultrathin HfO2 Dielectrics on 4H-SiC (0001)
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Low Temperature Deposition of HfO2 Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition
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Electrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2O
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High Temperature Annealing Study of Al2O3 Deposited by ALCVD on n-Type 4H-SiC

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Abstract:

Al2O3 has been grown by Atomic Layer Chemical Vapour Deposition (ALCVD) on ntype 4H-SiC using O3 as an oxidant. After post-deposition, annealing at high temperature (1000°C) in Argon atmosphere for different time periods (1h, 2h, 3h) was performed. Bulk and interface properties of the as-grown as well as the annealed films were studied by electrical measurements (CV, IV, DLTS) and Secondary Ion Mass Spectrometry (SIMS) measurements. The electrical measurements show a decreasing shift of the flatband voltage indicating a diminution of the negative oxide charges with increasing annealing time. After annealing at 1000°C for 3h, the flatband voltage shift has decreased to 6V. The SIMS measurements indicate a double interface with a SiOx (x ≤ 2) interlayer in the as-grown samples while only one interface is observed after annealing, leading to improved electrical behavior of the Metal-Oxide-Semiconductor devices.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1067-1070

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1067

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Online since:

October 2006

Authors:

Marc Avice, Ulrike Grossner, Ola Nilsen, Jens S. Christensen, Helmer Fjellvåg, Bengt Gunnar Svensson

Keywords:

Al2O3, ALCVD, Annealing, CV, DLTS, MOS, SIMS

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] M. A and R. J Trew: MRS Bulletin, March (1997), p.19.

Google Scholar

[2] H. Linewith, S. Dimitrijev, and C.E. Weitzel: IEEE Trans. Elec. Dev., Vol., 49 (2002), p.658.

Google Scholar

[3] M. M. Maranovski and J. A. Cooper: IEEE Trans. Electron Devices, Vol. 46 (2000), p.520.

Google Scholar

[4] M. D. Groner, J.W. Elam, F.H. Fabreguette, and S.M. George: Thin Solid Films, Vol. 413 (2002), p.186.

DOI: 10.1016/s0040-6090(02)00438-8

Google Scholar

[5] V.V. Afanas'ev, F. Ciobanu, S. Dimitrijev, and G. Pensl: J. Phys. Cond. Mat., Vol. 16 (2004), p.1839.

Google Scholar

[6] Y. Chang, F. Ducroquet, L. G. Gosset, A. Sibai: Journal de Physique IV, Vol. 11 (2001), p.139.

Google Scholar

[7] Y. Chang, F. Ducroquet, E. Gautier, O. Renault: Microelec. Engineering, Vol. 72 (2004), p.326.

Google Scholar

[8] M. Avice, U. Grossner, O. Nilsen, B. Svensson: Mat. Sci. Forum, Vol. 483-485 (2004), p.705 b Fig. 4: SIMS measurements of both as-grown (a) and 3h annealed (b) Al2O3/SiC capacitors. a.

Google Scholar