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Recent Progress of SiC Hot-Wall Epitaxy and Its Modeling

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Abstract:

From the engineering point of view, SiC hot-wall epitaxy is a very important process in SiC semiconductor processes. There are lots of experimental reports on SiC hot-wall epitaxy. They discussed the growth rate, surface morphology, doping concentration, etc. Recently, the effect of face polarity is also made clear. However, each report mentioned the particular results that strongly depend on the experimental conditions and reactor design. In addition, the discussion with inlet condition such as source gas C/Si ratio, not the depositing surface condition, leads to the confusion. In order to understand and try to design and optimize the hot-wall CVD reactor, a numerical approach is attempted. The authors have tried to make it clear that depositing surface condition might be a universal parameter of SiC CVD, and the numerical simulation could predict the growth rate, surface morphology and doping concentration by taking account of the depositing surface condition. In this study, at first, the recent progress of SiC hot-wall epitaxy in experiment is summarized. Then, the present status of its numerical modeling is explained.

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Materials Science Forum (Volumes 527-529)

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129-134

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https://doi.org/10.4028/www.scientific.net/MSF.527-529.129

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Online since:

October 2006

Authors:

Shin Ichi Nishizawa, Michel Pons

Keywords:

Doping, Etching, Growth Rate, Hot-Wall CVD, Numerical Modeling, Surface Morphology, Surface Structure

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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