Paper Titles
Preface
Reduction of Dislocations in the Bulk Growth of SiC Crystals
p.3
The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals
p.9
Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical Heaters
p.15
Halide-CVD Growth of Bulk SiC Crystals
p.21
Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC
p.27
Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates
p.31
Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds
p.35
Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots Via Physical Vapor Transport (PVT)
p.39

Halide-CVD Growth of Bulk SiC Crystals

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Abstract:

A novel approach to the high growth rate Chemical Vapor Deposition of SiC is described. The Halide Chemical Vapor Deposition (HCVD) method uses SiCl4, C3H8 (or CH4), and hydrogen as reactants. The use of halogenated Si source and of separate injection of Si and C precursors allows for preheating of source gases without causing premature chemical reactions. The stoichiometry of HCVD crystals can be controlled by changing the C/Si flow ratio and can be kept constant throughout growth, in contrast to the Physical Vapor Transport technique. HCVD was demonstrated to deposit high crystalline quality, very high purity 4H- and 6H-SiC crystals with growth rates comparable to other bulk SiC growth techniques. The densities of deep electron and hole traps are determined by growth temperature and C/Si ratio and can be as low as that found in standard silane-based CVD epitaxy. At high C/Si flow ratio, the resistivity of HCVD crystals exceeds 105 _cm. These characteristics make HCVD an attractive method to grow SiC for applications in high-frequency and/or high voltage devices.

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Silicon Carbide and Related Materials 2005 View Preview

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

21-26

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.21

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Online since:

October 2006

Authors:

A.Y. Polyakov, Mark A. Fanton, Marek Skowronski, Hun Jae Chung, Saurav Nigam, Sung Wook Huh

Keywords:

Bulk Growth, Crystalline Quality, Deep Traps, Halide CVD, Impurity, Semi-Insulating Crystals, Stoichiometry

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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