Paper Titles
Ab Initio Studies of the Surface Reaction of Si2C and SiC2 with Si on the 4H-SiC (000-1) Surface
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Thick Epitaxial Layers on 4º Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kV
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Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers
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Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers
p.247
SiC Migration Enhanced Embedded Epitaxial (ME3) Growth Technology
p.251
CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates
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Studies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC Mask
p.259
6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method
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Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal Furnace
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SiC Migration Enhanced Embedded Epitaxial (ME3) Growth Technology

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Abstract:

In this work, we have developed an innovative epitaxial growth process named the “Migration Enhanced Embedded Epitaxial” (ME3) growth process. It was found that at elevated growth temperatures, the epitaxial growth at the bottom of the trenches is greatly enhanced compared to growth on the sidewalls. This is attributed to the large surface diffusion length of reactant species mainly due to the higher growth temperature. In addition, it was found that this high temperature ME3 growth process is not influenced by the crystal-orientation. Similar growth behavior was observed for stripe-trench structures aligned either along the [11-20] or [1-100] directions. No difference was observed in the electrical performance of the pn diodes fabricated on either oriented stripe geometry. The ME3 process can also be used as an alternative to ion-implantation technology for selective doping process.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

251-254

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.251

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Online since:

October 2006

Authors:

Yuuichi Takeuchi, Mitsuhiro Kataoka, Tsunenobu Kimoto, Hiroyuki Matsunami, Rajesh Kumar Malhan

Keywords:

Embedded Epitaxy, Junction Field Effect Transistor (JFET), Migration, PN-Junction Diode

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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