Paper Titles
The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals
p.9
Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical Heaters
p.15
Halide-CVD Growth of Bulk SiC Crystals
p.21
Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC
p.27
Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates
p.31
Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds
p.35
Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots Via Physical Vapor Transport (PVT)
p.39
Growth and Characterization of Large Diameter 6H and 4H SiC Single Crystals
p.43
Growth of SiC Boules with Low Boron Concentration
p.47

Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates

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Abstract:

To devise a means of circumventing the cost of thick SiC epitaxy to generate drift layers in PiN diodes for >10kV operation, we have endeavored to enhance the minority carrier lifetimes in bulk-grown substrates. In this paper, we discuss the results of a process that has been developed to enhance minority carrier lifetimes to in excess of 30 μs in bulk-grown 4H-SiC substrates. Measurement of lifetimes was principally conducted using microwave-photoconductive decay (MPCD). Confirmation of the MPCD lifetime result was obtained by electron beam induced current (EBIC) measurements. Additionally, deep level transient spectroscopic analysis of samples subjected to this process suggests that a significant reduction of deep level defects in general and of Z1/Z2, specifically, may account for the significantly enhanced lifetimes. Finally, a study of operational performance in devices employing drift layers fabricated from substrates produced by this process confirmed ambipolar lifetimes in the microsecond range.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

31-34

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.31

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Online since:

October 2006

Authors:

Jason R. Jenny, D.P. Malta, V.T. Tsvetkov, Mrinal K. Das, H. McD. Hobgood, Calvin H. Carter Jr.

Keywords:

Bulk Growth, DLTS, EBIC, Lifetime, MPCD

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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