Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds

Tomoaki Furusho; Ryota Kobayashi; Taro Nishiguchi; M. Sasaki; K. Hirai; Toshihiko Hayashi; Hiroyuki Kinoshita; Hiromu Shiomi

doi:10.4028/www.scientific.net/MSF.527-529.35

Paper Titles

Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical Heaters
p.15

Halide-CVD Growth of Bulk SiC Crystals
p.21

Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC
p.27

Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates
p.31

Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds
p.35

Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots Via Physical Vapor Transport (PVT)
p.39

Growth and Characterization of Large Diameter 6H and 4H SiC Single Crystals
p.43

Growth of SiC Boules with Low Boron Concentration
p.47

Resistivity Distribution in Undoped 6H-SiC Boules and Wafers
p.51

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Growth of Micropipe Free Crystals on 4H-SiC...

Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds

Abstract:

Growth of 4H-SiC bulk crystals on 4H-SiC {03-38} seeds was done. 4H-SiC {03-38} is obtained by inclining the c-plane toward <01-10> at a 54.7 degrees angle. Growth on the 4H-SiC {03-38} seed has the potential to achieve high quality crystals without micropipes and stacking faults. Micropipe-free c-plane 4H-SiC wafers were achieved by growth on the 4H-SiC {03-38} seed. A transmission X-ray topograph image of the micropipe free c-plane wafer revealed that there are no macroscopic defects with displacements.