Paper Titles
Characterization of SiC Crystals by Using Deep UV Excitation Raman Spectroscopy
p.333
Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy
p.339
Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals
p.343
Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC
p.347
Stacking Faults and 3C Quantum Wells in Hexagonal SiC Polytypes
p.351
Silicon Carbide: A Playground for 1D-Modulation Electronics
p.355
Peierls Barriers and Core Properties of Partial Dislocations in SiC
p.359
Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes
p.363
Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes
p.367

Stacking Faults and 3C Quantum Wells in Hexagonal SiC Polytypes

Article Preview

Abstract:

The electronic driving force for growth of stacking faults (SF) in n-type 4H SiC under annealing and in operating devices is discussed. This involves two separate aspects: an overall thermodynamic driving force due to the capture of electrons in interface states and the barriers that need to be overcome to create dislocation kinks which advance the motion of partial dislocations and hence expansion of SF. The second problem studied in this paper is whether 3C SiC quantum wells in 4H SiC can have band gaps lower than 3C SiC. First-principles band structure calculations show that this is not the case due to the intrinsic screening of the spontaneous polarization fields.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2005 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

351-354

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.351

Citation:

Cite this paper

Online since:

October 2006

Authors:

M.S. Miao, Walter R.L. Lambrecht

Keywords:

Band Structure, Quantum Well, Spontaneous Polarization, Stacking Fault

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2006 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] J. P. Bergman, H. Lendenmann, P. Å. Nilsson, U. Lindefelt and P. Skytt: Mater. Sci. Forum Vols. 353-3 (2000), p.299.

Google Scholar

[2] J. Q. Liu, H. J. Chung, T. Kuhr, Q. Li and M. Skowronski: Appl. Phys. Lett. Vol. 80 (2002), p.2111.

Google Scholar

[3] R. S. Okojie, X. Xhang, P. Pirouz, S. Tumakha, G. Jessen and L. Brillson: Appl. Phys. Lett. Vol. 79 (2001), p.3056.

DOI: 10.1063/1.1415347

Google Scholar

[4] M. S. Miao, S. Limpijumnong and W. R. L. Lambrecht: Appl. Phys. Lett. Vol. 79 (2001), p.4360.

Google Scholar

[5] S. Bai, R. P. Devaty, W. J. Choyke, U. Kaiser, G. Wagner, and M. F. MacMillan: Appl. Phys. Lett. Vol. 83 (2003), p.3171.

Google Scholar

[6] M. S. Miao and W. R. L. Lambrecht: Phys. Rev. B Vol. 68 (2003), p.155320.

Google Scholar

[7] S. Ha, M. Skowronski, J. J. Sumakeris, M. J. Paisley and M. K. Das: Phys. Rev. Lett. Vol. 92 (2004), p.175504.

Google Scholar

[8] H. Iwata, U. Lindefelt, S. Öberg, and P. R. Briddon: Mater. Sci. Forum Vols. 289-293 (2002), p.525; J. Phys. Condens. Matter Vol. 14 (2002), p.12733; Phys. Rev. B Vol. 65 (2002), p.0033203.

DOI: 10.1088/0953-8984/14/48/310

Google Scholar

[9] M. Methfessel, M. van Schilfgaarde, and R. A. Casali, in Electronic Structure and Physical Properties of Solids, The Uses of the LMTO Method, edited by H. Dreysse, Springer Lecture Notes, Workshop Mont Saint Odille, France 1998 (Springer, Berlin, 2000), p.114.

DOI: 10.1007/3-540-46437-9_3

Google Scholar

[10] T. A. Kuhr, J. Q. Liu, H. J. Chung, M. Skowronski, and F. Szmulowicz: J. Appl. Phys. Vol. 92 (2002), p.5863.

Google Scholar

[11] P. K. Sitch, R. Jones, S. Öberg, and M. I. Heggie: Phys. Rev. B Vol. 52 (1992), p.4951.

Google Scholar

[12] A. T. Blumenau, C. J. Fall, R. Jones, M. I. Heggie, P. R. Briddon, T. Frauenheim and S. Berg: J. Phys. Condens. Matter Vol. 14 (2002), p.12749.

DOI: 10.1088/0953-8984/14/48/311

Google Scholar

[13] A. Galeckas, J. Linnros and P. Pirouz: Appl. Phys. Lett. Vol. 81 (2002), 883.

Google Scholar

[14] A. Qteish, V. Heine, and R. J. Needs: Phys. Rev. B Vol. 45 (1992), p.6534.

Google Scholar