Evidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR Study

Ivan V. Ilyin; Marina V. Muzafarova; E.N. Mokhov; Vladimir Ilich Sankin; P.G. Baranov; S.B. Orlinskii; J. Schmidt

doi:10.4028/www.scientific.net/MSF.527-529.535

Paper Titles

Deep Level Point Defects in Semi-Insulating SiC
p.517

Divacancy and Its Identification: Theory
p.523

Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC
p.527

Thermal Evolution of Defects in Semi-Insulating 4H SiC
p.531

Evidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR Study
p.535

Signature of the Negative Carbon Vacancy-Antisite Complex
p.539

Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC
p.543

Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes
p.547

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Evidence of the Ground Triplet State of...

Evidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR Study

Abstract:

P6 and P7 centers, which are responsible for semi-insulating properties of SiC, were shown to be neutral Si-C divacancies (VSi-VC)o having a triplet ground state. The EPR experiments that were performed at very low temperatures and in complete darkness exclude the possibility of a thermal or optically excited triplet state and, as a result, the existing model of excited triplet state P6 and P7 centers was discarded. The optical alignment process which induces the spin polarization of the ground triplet 3A state of the P6, P7 centers in SiC was interpreted to be caused by strong spin selectivity of the intersystem crossing (ISC) nonradiative transitions from an excited 3E state to a metastable singlet 1A state. The luminescence and optical absorption are caused by transitions between spin sublevels of 3A and 3E states. The analogy in properties of a divacancy in SiC and the N-V defect in diamond allows considering the divacancy in SiC as a potential defect for the single defect spectroscopy.

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Materials Science Forum (Volumes 527-529)

Pages:

535-538

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.535

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October 2006

Authors:

Ivan V. Ilyin, Marina V. Muzafarova, E.N. Mokhov, Vladimir Ilich Sankin, P.G. Baranov, S.B. Orlinskii, J. Schmidt

Keywords:

Defect, EPR, Vacancy

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References

[1] W.E. Carlos, E.R. Glaser, and B.V. Shanabrook: Physica B 340-342 (2003), p.151.

Google Scholar

[2] V.S. Vainer, and V.A. Il'in: Soviet Physics: Solid State 23 (1981), p.2126.

Google Scholar

[3] Th. Lingner et al.: Phys. Rev. B 64 (2001), p.245212.

Google Scholar

[4] E. Sörman, N.T. Son, W.M. Chen, O. Kordina, C. Hallin, and E. Janzén: Phys. Rev. B 61 (2000), p.2613.

DOI: 10.1103/physrevb.61.2613

Google Scholar

[5] J.H.N. Loubser and J.A. van Wyk: Rep. Prog. Phys. 41 (1978), p.1201.

Google Scholar

[6] D.A. Redman, S. Brown, R.H. Sands, and S.R. Rand: Phys. Rev. Lett. 67 (1991), p.3420.

Google Scholar

[7] S.B. Orlinski, J. Schmidt, E.N. Mokhov, and P.G. Baranov: Phys. Rev. B 67 (2003), p.125207.

Google Scholar

[8] Mt. Wagner, N.Q. Thinh, N.T. Son, W.M. Chen, E. Janzén, P.G. Baranov, E.N. Mokhov, C. Hallin, and J.L. Lindström: Phys. Rev. B 66 (2002), p.155214.

Google Scholar

[9] A. Gruber, A. Drabenstedt, C. Tietz, L. Fleury, J. Wrachtrup, and C. von Borczyskowski: Science 276 (1997), p.2012; A.P. Nizovtsev, S. Ya. Kilin, F. Jelezko, I. Popa, A. Gruber, and J. Wrachtrup: Physica B 340-342 (2003), p.106.

DOI: 10.1016/j.physb.2003.09.014

Google Scholar