Low Energy Ion Modification of 3C-SiC Surfaces

Christian Förster; Ratislav Kosiba; Gernot Ecke; Volker Cimalla; Oliver Ambacher; Joerg Pezoldt

doi:10.4028/www.scientific.net/MSF.527-529.685

Paper Titles

Hydrogen Nanochemistry Achieving Clean and Pre-Oxidized Silicon Carbide Surface Metallization
p.667

Temperature Induced Phase Transformation on the 4H-SiC(11-20) Surface
p.673

SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2)
p.677

Experimental Study of the Formation and Oxidation of the Sm/4H-SiC Surface Alloy
p.681

Low Energy Ion Modification of 3C-SiC Surfaces
p.685

Phonons in SiC from INS, IXS, and Ab-Initio Calculations
p.689

Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition
p.695

Precise Determination of Thermal Expansion Coefficients Observed in 4H-SiC Single Crystals
p.699

Thermal Lens Technique for the Determination of SiC Thermo-Optical Properties
p.703

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Low Energy Ion Modification of 3C-SiC Surfaces

Low Energy Ion Modification of 3C-SiC Surfaces

Abstract:

The effects of argon and nitrogen bombardment of 3C-SiC surfaces at acceleration voltages below 2 keV were studied by stylus profilometry, reflectometry, reflection high energy electron diffraction and Auger electron spectroscopy (AES). The erosion rate of the SiC surface was determined. It was found that the sputtering rate for argon was three times higher compared to nitrogen. AES measurements revealed argon and nitrogen incorporation at a depth of a few nanometers as well as stoichiometric changes at the same depth scale independent of the acceleration voltage. In the case of the interaction of nitrogen ions with the 3C-SiC surface the formation of a SiCNalloy was detected.