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Structural Properties of Titanium-Nickel Films on Silicon Carbide Following High Temperature Annealing

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Abstract:

Structural properties of Ni/Ti films deposited on 4H-SiC and annealed at temperatures from 800 to 1040°C have been studied. Films with three different metal deposition sequences were investigated by X-ray diffraction and Auger electron spectroscopy: (A) Ti(100 nm)/Ni(50 nm); (B) Ti(4 nm)/Ni(50 nm)/Ti(100 nm); and (C) Ti(4 nm)/Ni(150 nm). A distinct spatial separation of nickel silicide and titanium carbide layers was observed in all samples. It was discovered that the distribution of the products of the solid state chemical reaction in samples (A) and (B) was independent on the deposition sequence of Ti and Ni layers. The titanium carbide layer located on the interface and covered by the clearly separated nickel silicide layer was detected in both samples after heat treatments.

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Silicon Carbide and Related Materials 2005 View Preview

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

871-874

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.871

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Online since:

October 2006

Authors:

Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, C. Mark Johnson, Rajesh Kumar Malhan, Tetsuya Yamamoto

Keywords:

Auger Electron Spectroscopy (AES), Nickel Silicide, Ohmic Contact, Titanium Carbide

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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