High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism

N. Boutarek; Didier Chaussende; Roland Madar

doi:10.4028/www.scientific.net/MSF.556-557.105

Paper Titles

Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition
p.89

Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route
p.93

Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers
p.97

High Quality Uniform SiC Epitaxy for Power Device Applications
p.101

High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism
p.105

Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection
p.109

Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors
p.113

Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers
p.117

In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition
p.121

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557High SiC Growth Rate Obtained by...

High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism

Abstract:

The growth of 3C-SiC polycrystal and 6H-SiC homoepitaxial layers from Metal-Si alloys is carried out as function of temperature and propane partial pressure. Based on the vapourliquid- solid mechanism, we present a new configuration for the growth of SiC which could allow first to simplify the liquid handling at high temperature and second to precisely control the crystal growth front. 3C-SiC crystals exhibiting well-faceted morphology are obtained at 1100-1200°C with outstanding deposition rates, varying from 1 to 1.5 mm/h in Ti-Si melt. At 1200-1300°C, thick homoepitaxial 6H-SiC layers were successfully obtained in Co-Si melts, with growth rates up to 200 ,m/h. Details on the experiments will be given and the potentialities of such process for the growth of bulk crystals will be discussed..