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Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection

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Abstract:

Homoepitaxial growth of 4H-SiC p+/π/n- multi-epilayer on n+ substrate and in-situ doping of p+ and π-epilayer have been achieved in the LPCVD system with SiH4+C2H4+H2. The surface morphologies, homogeneities and doping concentrations of the n--single-epilayers and the p+/π/n- multi-epilayers were investigated by Nomarski, AFM, Raman and SIMS, respectively. AFM and Raman investigation showed that both single- and multi-epilayers have good surface morphologies and homogeneities, and the SIMS analyses indicated the boron concentration in p+ layer was at least 100 times higher than that in π layer. The UV photodetectors fabricated on 4H-SiC p+/π/n- multi-epilayers showed low dark current and high detectivity in the UV range.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

109-112

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.109

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Online since:

September 2007

Authors:

Xing Fang Liu, Guo Sheng Sun, Yong Mei Zhao, Jin Ning, J.Y. Li, Lei Wang, Wan Shun Zhao, M.C. Luo, Jin Min Li

Keywords:

4H-SiC, Homoepitaxy, Multi-Epilayer, p+-π-n-, UV Detection

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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