Paper Titles
Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process
p.271
Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation
p.275
Partial Dislocations under Forward Bias in SiC
p.279
Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System
p.283
The DI Defect is Associated with a Stacking Fault?
p.287
Trends in Commercially Available SiC Substrates
p.291
Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy
p.295
XRD and Photoluminescence Whole-Wafer Mapping of 4H-SiC Wafers
p.299
XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution
p.303

The DI Defect is Associated with a Stacking Fault?

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Abstract:

Using TEM we show that defective regions are formed in SiC by ion implantation, and that some of the regions grow at the expense of others. Using HRTEM we show that these regions contain a large number of stacking faults. It is proposed that these stacking faults are Frank intrinsic stacking faults formed by condensation of divacancies, and it is this defect that is associated with the DI defect.

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Silicon Carbide and Related Materials 2006 View Preview

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

287-290

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.287

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Online since:

September 2007

Authors:

Kenneth A. Jones, T.S. Zheleva, R.D. Vispute, Shiva S. Hullavarad

Keywords:

DI Defect, Divacancy, Ion Implantation, Stacking Fault

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] L. Patrick and W.J. Choyke: Phys. Rev B Vol. 5 (1972), p.3253.

Google Scholar

[2] M.D. Aboefotoh and J.P. Doyle: Phys. Rev. B Vol. 59 (1999), p.10823.

Google Scholar

[3] M.V.B. Pinheiro, E. Rauls, U. Gerstmann, S. Greulich-Weber, and J.M. Spaeth: Phys Rev. B Vol. 70 (2004), p.245204.

Google Scholar

[4] K.A. Jones, P.B. Shah, T.S. Zheleva, M.H. Ervin, M.A. Derenge, J.A. Freitas, S. Harmon, J. McGee, and R.D. Vispute: J. Appl. Phys. Vol. 96 (2004), p.5613.

DOI: 10.1063/1.1798404

Google Scholar

[5] L.B. Ruppalt, S. Stafford, D. Yuan, K.A. Jones, M.H. Ervin, K.W. Kirchner, T.S. Zheleva, M.C. Wood, B.R. Geil, E. Forsythe, R.D. Vispute and T. Venkatesan: Sol. Stat. Electr Vol. 47 (2003), p.253.

DOI: 10.1016/s0038-1101(02)00203-4

Google Scholar

[6] R.V. Ravi and G.J. Varker: J. Appl. Phys. Vol. 45 (1974), p.263.

Google Scholar

[7] G.D. Watkins and J.W. Corbett: Phys. Rev. Vol. 138A (1965), p.543.

Google Scholar

[8] A.T. Blumenau, C.J. Fall, R. Jones, S. Oberg, T. Frauenheim, and P.R. Briddon: Phys. Rev. Vol. B58 (2003), p.174108.

Google Scholar

[9] T. Egilsson, J.P. Bergman, I.B. Ivanov, A. Henry, and E. Jansen: Phys. Rev. Vol. B59 (1999), p. (1956).

Google Scholar