Paper Titles
Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation
p.275
Partial Dislocations under Forward Bias in SiC
p.279
Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System
p.283
The DI Defect is Associated with a Stacking Fault?
p.287
Trends in Commercially Available SiC Substrates
p.291
Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy
p.295
XRD and Photoluminescence Whole-Wafer Mapping of 4H-SiC Wafers
p.299
XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution
p.303
(Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory
p.307

Trends in Commercially Available SiC Substrates

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Abstract:

Device quality SiC wafers are extremely expensive and available from only a limited number of vendors. This has limited the ability of researchers to compare and evaluate quality from various vendors. This paper surveys some properties and characteristics of SiC wafers purchased in the commercial market place and describes the product variability among vendors as a method to highlight the areas where improvements in substrate quality are desirable.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

291-294

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.291

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Online since:

September 2007

Authors:

James D. Oliver

Keywords:

Atomic Force Microscope (AFM), Bow, Cross Polarizer, Defect, Photoluminescence (PL), Substrate, Warp

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

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