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Impurity Conduction in Silicon Carbide
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Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes
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Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons
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Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers
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Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes

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Abstract:

Recently published experimental results for 4H–SiC diodes up to 700 °C are used to deduce the hole lifetime temperature-dependence in n-base for high temperature range. The reverse recovery measurements are interpreted by the nonisothermal drift-diffusion simulator DYNAMIT. The uncertainties from lifetimes unknown behavior in emitter layers and consequences from possible nonuniform lifetime distribution in n-base are analyzed. Results show that up to temperature 400 °C nearly quadratic dependence of lifetime versus temperature τ ~ T 2 holds. At higher temperatures lifetime growth is accelerated approximately to quartic dependence τ ~ T 4.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

375-378

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.375

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Online since:

September 2007

Authors:

Andres Udal, Enn Velmre

Keywords:

4H-SiC Diode, Carrier Lifetime Temperature-Dependence, Reverse Recovery Charge, Reverse Recovery Experiments, Reverse Recovery Simulations

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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