Paper Titles
Properties of Different Room-Temperature Photoluminescence Bands in 4H-SiC Substrates Investigated by Mapping Techniques
p.411
Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates
p.415
Reverse Biased Electrochemical Etching of SiC-SBD
p.419
Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy
p.423
Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure
p.427
The Premature Breakdown in 6H-SiC p-n Junction
p.431
Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide
p.435
Point Defects and their Aggregation in Silicon Carbide
p.439
A Theoretical Study on Aluminium-Related Defects in SiC
p.445

Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

Article Preview

Abstract:

We present the injection electroluminescence spectra in the temperature range 290-760 K of 3C-SiC pn structure, which was fabricated by sublimation epitaxy in vacuum on 6H-SiC substrate. The dominant emission band of injection electroluminescence (IEL) spectrum was observed in the green region; at room temperature the IEL intensity outside the region of hν ≈ 2.0- 2.5 eV was less than 3% of that of the green peak. The peak parameters at room temperature are: hνmax ≈ 2.32 eV, full width at half maximum w ≈ 100 meV. The green peak shifted in the longwave direction with increasing temperature; the hνmax (T) dependence was linear with the slope of - 1.3x10-4 eV/K. Both the IEL intensity of the green peak at hνmax and band width w increased upon heating. The w(T) dependence was linear with the slope of 4.6x10-4 eV/K; intensity increased with the activation energy of 70 meV. The green IEL band can be considered to be due to the free exciton annihilation or to the band-band recombination and edge IEL increasing with rising temperature can be explained by the nonequilibrium charge carriers lifetime increasing.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2006 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

427-430

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.427

Citation:

Cite this paper

Online since:

September 2007

Authors:

Anatoly M. Strel'chuk, Alexander A. Lebedev, N.S. Savkina, Alexey N. Kuznetsov

Keywords:

3C-SiC, Band Edge Electroluminescence, pn Structures, Sublimation Heteroepitaxy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2007 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] Yu.M. Altaiskii et al.: Sov. Phys. Semicond. Vol. 13 (1979), p.1152.

Google Scholar

[2] M. Ikeda et al.: J. Appl. Phys. Vol. 50 (1979), p.8215.

Google Scholar

[3] R. Dalven: J. Phys. Chem. Solids Vol. 26 (1965), p.439.

Google Scholar

[4] W.J. Choyke: Mat. Res. Bull. Vol. 4 (1969), p. S141.

Google Scholar

[5] D.S. Nedzvetskii et al.: Sov. Phys. Semicond. Vol. 2 (1969), p.914.

Google Scholar

[6] R.G. Humphreys et al.: J. Phys. Soc. Jpn. Vol. 49 Suppl. A (1980), p.519.

Google Scholar

[7] A.M. Strel'chuk et al.: Mater. Science Forum Vol. 457-460 (2004), p.1057.

Google Scholar

[8] M.M. Anikin et al.: Semiconductors Vol. 28 (1994), p.171.

Google Scholar

[9] M.M. Anikin et al. in: Semiconductor interfaces and microstructures, edited by Z.C. Feng, World Scientific, Singapore, New Jersey, London, Hong Kong, pp.280-311 (1992). a b.

Google Scholar