Paper Titles
Point Defects and their Aggregation in Silicon Carbide
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A Theoretical Study on Aluminium-Related Defects in SiC
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Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC
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Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC
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Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis
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Influence Of Growth Conditions on Irradiation Induced Defects in 4H-SiC
p.461
Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation
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New Insight in Scandium-Mediated Growth Techniques: Sc-Related Defects in 4H-SiC and 6H-SiC
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Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis

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Abstract:

Impurity atoms in a high-purity semi-insulating 4H-SiC substrate fabricated by sublimation and an n-type 3C-SiC substrate fabricated by Chemical Vapor Deposition (CVD) were evaluated by neutron activation analysis. Cr, Fe, Zn, As, Br, Mo, Sb, Eu, Yb, Hf, Ta, W and Au atoms were detected in the 4H-SiC fabricated by sublimation. In the 3C-SiC fabricated by CVD, Cr, Zn, As, Br, Mo, Sb, La Sm and Hf atoms were found. The concentration of these atoms tends to decrease with increasing atomic number.

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Silicon Carbide and Related Materials 2006 View Preview

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.457

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Online since:

September 2007

Authors:

Takeshi Ohshima, O. Tokunaga, Masahiko Issiki, Fumio Sasajima, Hisayoshi Itoh

Keywords:

Impurity Atoms, Neutron Activation Analysis

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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